| 查看: 2112 | 回复: 2 | |||
[交流]
新加坡-MIT科研联盟中心(SMART）招聘博士后研究人员 已有1人参与
|
| 具体内容见回复帖。因被提示“发过类似内容”而无法发布。 |
回复此楼» 猜你喜欢
西南交通大学国家级人才团队2026年博士研究生招生（考核制）—机械、材料、力学方向
已经有3人回复
-
救命帖
已经有6人回复
-
存款400万可以在学校里躺平吗
已经有37人回复
-
英文综述是否需要润色及查重
已经有5人回复
-
限项规定
已经有5人回复
-
为什么nbs上溴 没有产物点出现呢
已经有9人回复
-
招博士
已经有3人回复
-
最失望的一年
已经有18人回复
|
The Singapore-MIT Alliance for Research and Technology (SMART) is a major research enterprise established by the Massachusetts Institute of Technology (MIT) in partnership with the National Research Foundation of Singapore (NRF) in 2007. SMART is MIT\'s first, and to-date only, research centre outside the United States. You can find more details about SMART on https://smart.mit.edu/about-smart/about-smart. Low Energy Electronic Systems (LEES) (IRG) is one of the Interdisciplinary Research Groups (IRGs) under SMART, aiming to identify new integrated circuit technologies that become the new added value for reduced energy per function, lower power consumption and higher performance in our electronics infrastructure. More details about LEES can be found on https://smart.mit.edu/research/lees/about-lees. We are looking for PostDoc Associate in the area of microelectronic and nanoelectronic devices, particularly on GaN based high electron mobility transistors (HEMTs). The successful candidate will join LEES and be involved the team’s role of developing technologies for novel semiconductor devices, circuits and systems. The work involves layout design, process development, fabrication, characterization, device physics study and simulation of GaN based transistors for the next-generation communication and power electronics applications. This PostDoc position will have a strong focus on the research and development of Si-CMOS compatible fabrication technologies of GaN HEMTs on silicon substrates with high frequency operations up to E-band (60-90 GHz). In addition, this position will also take the responsibility of collaboration with colleagues and industry to realize 200-mm-wafer-size Si-CMOS and GaN integration. The successful candidate will be expected to have strong experience and a high level of proficiency in the area of semiconductor devices physics and fabrication, and initiative to develop new device structures and fabrication technologies to generate publications and patents. Desired skills and experience (for the PostDoc candidate): • PhD degree in microelectronics, applied physics or a related field; • Semiconductor fabrication experience in a cleanroom, using tools including but not limited to mask aligner, wet bench, dry etcher, e-beam evaporator, sputter, PECVD, RTA, E-beam lithography etc.; • Knowledge of semiconductor transistor physics and fabrication process, particularly of field effect transistor (FET) and high electron mobility transistor (HEMT); • Knowledge of material physics about Gallium Nitride (GaN); • Knowledge of RF and mmWave technologies, particularly of RF/mmWave characterization for transistors, including small-signal S-parameter, noise and load-pull; • Programming with MATLAB, Labview etc.; • Experience with physics-based semiconductor CAD software, e. g. Silvaco TCAD; • Good command of written and spoken English; • Good collaboration with colleagues. The postdoctoral associate will work with an integrated team of faculty, researchers and students from SMART, MIT and Singapore partners. We welcome interested applicants to submit a full CV including a list of publications to Dr. LIU, Zhihong (zhihong@smart.mit.edu). |
2楼2018-06-27 20:34:35
3楼2018-07-10 16:35:16