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1£¬Since 8 layers of semiconductor and 6 layers of metal are used, there should be a significant quantum confinement in the direction perpendicular to the interface. This will push down the valence band of semiconductor and probably affect the resulting calculated Schottky barrier height. Therefore some sort of correction is needed, to obtain a realistic barrier height. ´Ë´¦²»ÖªµÀÒª¼ÓʲôÐÞÕý£¬Èç¹û¼ÓÐÞÕýÄDz»ÊÇËùÓнá¹û¶¼ÒªÖØÐ¼ÆË㣿²»ÏÖʵ°¡¡£Èç¹û²»¼ÓÐÞÕý£¬´Ë´¦ÈçºÎ¹æ±ÜµôÕâ¸öÎÊÌ⣿
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wuning128: ½ð±Ò+25, ¡ï¡ï¡ïºÜÓаïÖú 2017-08-11 20:10:16
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3Â¥2017-08-08 12:52:01
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valenhou001

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wuning128: ½ð±Ò+15, ¡ï¡ï¡ïºÜÓаïÖú 2017-08-11 20:10:23
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APPLIED PHYSICS LETTERS 110, 233110 (2017)
A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction
http://dx.doi.org/10.1063/1.4985013
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4Â¥2017-08-09 13:28:26
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wuning128

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4Â¥: Originally posted by valenhou001 at 2017-08-09 13:28:26
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APPLIED PHYSICS LETTERS 110, 233110 (2017)
A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction
http://dx.doi.org/10.1063 ...

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