| 查看: 732 | 回复: 0 | |||
dingjiajian新虫 (小有名气)
|
[求助]
英翻汉
|
|
A transparent substrate (either a pyrex or quartz wafer) was prepared by piranha cleaning, and a dehydration bake as described above. After coating the wafer with resist (SU-8 (50) at 500 rpm for 15 s, followed by 3000 rpm for 15 s), we soft-baked the resist partially on a hot plate. The temperature of the hot plate was ramped from room temperature to 105 ◦C over ～8 min, held at 105 ◦C for 10 min, and then allowed to cool to ～75 ◦C. We then immediately brought this layer of SU-8 into contact with a wafer bearing the multilayered SU-8 structures that we had formed. Prior to contact, the second wafer had been placed on a hot plate at 75 ◦C. As the wafers were contacted, we applied pressure with a pair of tweezers to ensure that therewas contact over the majority of thewafer and that air bubbles were eliminated. After the wafer had cooled to room temperature, blanket exposure of the resist through the pyrex wafer and a post-bake schedule as described previously (ramp up to 105 ◦C, hold at 105 ◦C for 15 min, cool down to room temperature) produced a sealed microstructure in SU-8. In cases where we had created fluidic ports in the first layer of SU-8 (rather than in the substrate), we released the microstructure from the substrate by placing the devices (oneby- one) into water and sonicating. The device separated from the oxide-coated silicon substrate, but remained attached to the pyrex support. If fluidic ports already existed in the top wafer (e.g. drilled quartz wafers), we modified the bonding procedure. The quartz/SU-8 devices were fabricated by first preparing the two quartz wafers (both the one with holes drilled and without) as described above. We then coated the undrilled wafer with SU-8 (50) to form a film approximately 50 μm thick. The prebake procedurewas as for bonding otherwafers with SU-8: the resist was ramped up to 105 ◦C (over ～8 min), held at 105 ◦C for 10 min, and then cooled to 75 ◦C, at which point the drilled wafer was brought into contact with the film of SU-8, pressed to seal, and cooled down to room temperature. We exposed the resist through an appropriate mask aligned to the drilled ports. After the post-exposure bake, the resist was developed by flowing PGMEA in through the fluidic ports. |
回复此楼» 猜你喜欢
93BebMhtakh前后11位开头都是大写
已经有5人回复
-
欢迎发来filecode的Mz6后的代码验证其规律
已经有86人回复
-
感觉是下周放榜了
已经有11人回复
-
filecode=后面第一个是大写字母
已经有10人回复
-
时间戳变了，能看出什么问题？
已经有4人回复
-
哪位老哥知道今年的国自然具体哪一天放榜？
已经有15人回复
-
今天系统多次维护，明天很可能放榜！
已经有9人回复
-
时间戳又变了8-15
已经有25人回复
-
2027广东省杰青
已经有6人回复
-
快农历七夕节了，轻松一下，男人悄悄话，女施主请不要进来。
已经有3人回复
