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A transparent substrate (either a pyrex or quartz wafer) was prepared by piranha cleaning, and a dehydration bake as described above. After coating the wafer with resist (SU-8 (50) at 500 rpm for 15 s, followed by 3000 rpm for 15 s), we soft-baked the resist partially on a hot plate. The temperature of the hot plate was ramped from room temperature to 105 ◦C over ～8 min, held at 105 ◦C for 10 min, and then allowed to cool to ～75 ◦C. We then immediately brought this layer of SU-8 into contact with a wafer bearing the multilayered SU-8 structures that we had formed. Prior to contact, the second wafer had been placed on a hot plate at 75 ◦C. As the wafers were contacted, we applied pressure with a pair of tweezers to ensure that therewas contact over the majority of thewafer and that air bubbles were eliminated. After the wafer had cooled to room temperature, blanket exposure of the resist through the pyrex wafer and a post-bake schedule as described previously (ramp up to 105 ◦C, hold at 105 ◦C for 15 min, cool down to room temperature) produced a sealed microstructure in SU-8. In cases where we had created fluidic ports in the first layer of SU-8 (rather than in the substrate), we released the microstructure from the substrate by placing the devices (oneby- one) into water and sonicating. The device separated from the oxide-coated silicon substrate, but remained attached to the pyrex support. If fluidic ports already existed in the top wafer (e.g. drilled quartz wafers), we modified the bonding procedure. The quartz/SU-8 devices were fabricated by first preparing the two quartz wafers (both the one with holes drilled and without) as described above. We then coated the undrilled wafer with SU-8 (50) to form a film approximately 50 μm thick. The prebake procedurewas as for bonding otherwafers with SU-8: the resist was ramped up to 105 ◦C (over ～8 min), held at 105 ◦C for 10 min, and then cooled to 75 ◦C, at which point the drilled wafer was brought into contact with the film of SU-8, pressed to seal, and cooled down to room temperature. We exposed the resist through an appropriate mask aligned to the drilled ports. After the post-exposure bake, the resist was developed by flowing PGMEA in through the fluidic ports. |
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