| 查看: 1326 | 回复: 10 | ||
| 【奖励】 本帖被评价6次，作者返求于己增加金币 5.5 个 | ||
| 当前主题已经存档。 | ||
[资源]
《《Semiconductor Material and Device Characterization》》
|
||
|
Semiconductor Material and Device Characterization By Dieter K. Schroder Publisher: Wiley-IEEE Press Number Of Pages: 800 Publication Date: 2006-01-30 Sales Rank: 211190 ISBN / ASIN: 0471739065 EAN: 9780471739067 Binding: Hardcover Manufacturer: Wiley-IEEE Press Studio: Wiley-IEEE Press Average Rating: 5 This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. Review: Essential text This is an essential text for engineers, scientists, and graduate students working in the semiconductor field. It contains a thorough review of all major electrical, optical, and physical characterization methods that are commonly used. Descriptions of techniques are generally conceptually oriented, clearly stated, and do not rely excessively on equations. In addition, many useful figures are included to help explain concepts when introduced. Up to date references are included for essentially every technique mentioned. Review: Great reference Schroder has compiled an extensive and very nearly complete guide to modern characterization techniques that apply mostly to semiconductors and solid state devices, but also to techniques used in general materials analysis. We used this text in a graduate level course in EE and found it easy to read through and concise for use as a quick reference. Well worth the money. Review: Semiconductor Material and Device Characterization This book offers an outstanding review of various techniques of semiconductor device processing. It is the type of book that is an invaluable reference to the device engineer. It's breadth is outstanding.pass: gigapedia.org http://mihd.net/jlr8ag http://rapidshare.com/files/6390 ... tion_0471739065.rar |
回复此楼» 猜你喜欢
售SCI一区文章，我:8.O.55.1.O.54,科目齐全,可伽急
已经有12人回复
-
售SCI文章，我:8O5.5.1.O.54,科目齐全,可+急
已经有13人回复
-
售SCI一区T0P文章，我:8O.55.1.O.54,科目全,可伽急
已经有15人回复
-
售SCI-T0P文章，我:8O.5.5.1.O.54,科目齐全,可+急
已经有19人回复
-
售SCI一区T0P文章，我:8.O.55.1.O.54,科目齐全,可+急
已经有12人回复
-
售SCI一区文章，我:8.O.55.1.O.54,科目齐全,可伽急
已经有6人回复
-
售SCI一区T0P文章，我:8.O55.1.O.54,科目全,可十急
已经有7人回复
-
售SCI一区T0P文章，我:8.O.55.1.O54,科目全,可伽急
已经有6人回复
-
售SCI一区文章，我:8O5.5.1.O5.4,科目全,可伽急
已经有5人回复
-
售一区SCI文章T0P，我:8O.551.O54,科目全,可十急
已经有4人回复
2楼2008-11-16 19:52:14
3楼2008-11-16 20:46:36
4楼2008-11-16 21:50:29
5楼2008-12-02 10:47:01
6楼2008-12-03 09:27:30
7楼2008-12-14 12:48:30
50