| 查看: 1717 | 回复: 51 | |||||||||
| 当前只显示满足指定条件的回帖,点击这里查看本话题的所有回帖 | |||||||||
[交流]
Tutorial Day of ECSCRM’16 and 11th European Conference on Silicon Carbide &
|
|||||||||
????????????????????????????SiC?????????????????????????Halkidiki????????????????????????λ???????? ??????μ?? We are very happy to announce that a SiC MOSFET Tutorial Day is planned for Sunday, September 25th, as a satellite event of ECSCRM 2016 (https://ecscrm2016.org). Tutorial Day title: Learn how to develop your SiC MOSFET in one day! 1. Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods), Prof. T. Kimoto (Kyoto University, Japan). 2. Physics and technology of SiO2/SiC interface, Dr. Kevin Matocha (Monolith, USA). 3. Other MOSFET processing (ohmic contacts, implantation, passivation, specific issues related to device geometry,??), Dr. Victor Veliadis (PowerAmerica/NCSU, USA). 4. SiC MOSFET device physics and design (operation principles, charge model, TCAD simulation). Prof. J. Cooper (Purdue University, USA) 5. SiC MOSFET electrical static and dynamic characterization, electrical stresses, device reliability. Prof. A. Castellazzi (Nottingham University, UK) 6. SiC MOSFET as circuit components - targeted applications, Dr. Ljubisa Stevanovic (GE, USA). 7. Summarizing remarks (SiC MOSFETs progress-main open points), under confirmation The main objective of the Tutorial is to introduce the audience to what is arguably the hottest topic in SiC devices: the technology of SiC MOSFETs. The Tutorial is primarily intended for PhD students working on SiC and possessing a solid technical background in semiconductor devices, as well as for semiconductor technology professionals who want to better familiarize themselves in this subject. Its concept/setup is to deliver all key information that will allow the audience to understand most of the content of any paper dedicated to SiC MOSFETs. Please note there is separate registration to attend the tutorial. The registration fee is ?60 for ECSCRM 2016 participants, and ?200 for non-participants. The registration fee for students is ?60, regardless of ECSCRM 2016 registration. The fee covers lectures, tutorial materials, as well as lunch and coffee breaks on tutorial day. Registration and payment can be made through the participant??s myecscrm account, along with the conference registration procedure. The organizing committee of ECSCRM 2016 Tutorial Day Matthias Bucher (Technical University of Crete, TUC, Greece) Peter Friedrichs (Infineon, Germany) Konstantin Vasilevskiy (Newcastle University, UK) Konstantinos Zekentes (FORTH, Greece image001.jpg |
» 猜你喜欢
有多少人是今天查系统知道结果的?
已经有18人回复
面上意见出来了
已经有17人回复
找导师
已经有5人回复
国社科又开始会评了,不知道这次命运如何
已经有3人回复
29号明天会评吗
已经有3人回复
麻烦专家们看看评委们的意见(F口面上)
已经有11人回复
售SCI一区文章,我:8.O.55.1.O.54,科目齐全,可伽急
已经有5人回复
我就是申请一个面上项目而已,这评审意见是按照杰青的条件评的吧?
已经有11人回复
售SCI文章,我:8O5.5.1.O.54,科目齐全,可+急
已经有4人回复
售SCI一区T0P文章,我:8O.55.1.O.54,科目全,可伽急
已经有4人回复
8楼2016-08-06 23:55:04
2楼2016-08-06 23:26:18
7楼2016-08-06 23:50:26
简单回复
godtornado12楼
2016-08-07 00:20
回复
linshengliu(金币+1): 谢谢参与
祝福 发自小木虫Android客户端









回复此楼