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【答案】应助回帖
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xdzqf: 金币+10, ★★★★★最佳答案 2016-06-09 00:36:17
lazy锦溪: LS-EPI+1, 感谢应助！ 2016-06-09 00:48:22
下次求助请提供英文标题
Accession number:
20131016087865
Title: Luminescence property of GaN films with change of thickness
Authors: Zhang, Yun1 Email author jszhangyun@hotmail.com; Xie, Zili1 Email author xzl@nju.edu.cn; Chai, Xuzhao1; Wang, Jian1; Liu, Bin1; Chen, Peng1; Zhang, Rong1; Han, Ping1; Shi, Yi1; Zheng, Youliao1
Author affiliation: 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, China
Corresponding author: Xie, Z. (xzl@nju.edu.cn)
Source title: Guangxue Xuebao/Acta Optica Sinica
Abbreviated source title: Guangxue Xuebao
Volume: 32
Issue: SUPPL.1
Issue date: December 2012
Publication year: 2012
Article number: s131004
Language: Chinese
ISSN: 02532239
CODEN: GUXUDC
Document type: Journal article (JA)
Publisher: Chinese Optical Society, P.O. Box 80, Xi'an, 710068, China
Abstract: Luminescence properties of GaN films with different thicknesses grown on γ-Al2O3 by MOCVD are studied from the absorption spectra and photoluminescence (PL) spectra. All the absorption spectra of films with different thicknesses have a cut-off edge around 3.38 eV, which is also observed in PL spectra. The thickness is estimated by using the interference fringes in the spectra, and the similar results suggest the same generation mechanism. Yellow luminescence (YL) is not observed in front-side PL excitation, whereas blue luminescence (BL) is obvious, appearing a blue shift in peak position and an increase of light intensity with the increase of the thickness. It is believed that a large number of oxygen impurity are brought in during the epitaxy growth, and the positive ON donor and the negative VGa acceptor can easily form the VGa-ON complex. The energy level of the VGa-ON complex is gradually pulled down with the increasing thickness. The PL spectrum obtained from backside excitation confirms this point.
Number of references: 12
Main heading: Light absorption
Controlled terms: Absorption spectra - Absorption spectroscopy - Gallium nitride - Light emission - Luminescence of inorganic solids - Photoluminescence - Thin films
Uncontrolled terms: Blue luminescence - Blue shift - GaN - GaN film - Generation mechanism - Interference fringe - Light intensity - Luminescence properties - Negative V - Oxygen impurity - Peak position - Photoluminescence spectrum - PL excitations - PL spectra - Thickness - Yellow luminescence
Classification code: 714.2 Semiconductor Devices and Integrated Circuits - 741 Light, Optics and Optical Devices - 741.1 Light/Optics - 801 Chemistry - 804.2 Inorganic Compounds
DOI: 10.3788/AOS201232.s131004
Database: Compendex
Compilation and indexing terms, © 2016 Elsevier Inc. |
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