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2016YING

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[资源] 石墨烯电子元器件 (eBook)---在 U.S. Army Research Laboratory (ARL)的研究

如题，做石墨烯电子元器件的可以看一下
研究报告题目：Graphene-based nanoelectronics (eBook)
报告时间：2011年
报告机构：U.S. Army Research Laboratory (ARL)
页数：36
作者：Dr. Osama M. Nayfeh, Mr. Matthew Chin, Dr. Matthew Ervin, Dr. James Wilson, Dr. Tony Ivanov, Dr. Robert Proie, Dr. Barbara M. Nichols, Dr. Frank Crowne, and Dr. Stephen Kilpatrick
PI: Dr. Madan Dubey
Co-PIs: Dr. Raju Nambaru and Dr. Marc Ulrich
目录：
List of Figures v
Acknowledgments vii
1. Introduction 1
2. Graphene Growth and Characterization 4
2.1 Chemical Vapor Deposition Furnaces .............................................................................4
2.2 Growth on Copper ...........................................................................................................5
2.3 Growth on Nickel ............................................................................................................7
2.4 Characterization by Raman Spectroscopy .......................................................................8
2.5 Graphene Exfoliation ......................................................................................................9
2.5.1 Overview and Purpose .........................................................................................9
2.5.2 Process Description ...........................................................................................10
3. Radio Frequency (RF) Top-Gated CVD Graphene Transistors 12
3.1 Device Construction ......................................................................................................12
3.2 DC and RF Performance ...............................................................................................13
4. Carbon Nanotube/Graphene Supercapacitors 16
4.1 Background ...................................................................................................................16
4.2 Capacitor Evaluation .....................................................................................................16
4.3 CNT Solution Comparison ............................................................................................17
4.4 Fabrication Method Comparison ...................................................................................17
4.5 Flexible Capacitors ........................................................................................................18
4.6 Graphene Capacitors .....................................................................................................19
4.7 Conclusions and Opportunities .....................................................................................19
5. Simulation and Modeling 20
6. Conclusions 25
6.1 Transitions .....................................................................................................................25
6.2 Future Research .............................................................................................................25
7. References 27
List of Symbols, Abbreviations, and Acronyms 31
Distribution List 33

摘要：A large program in graphene-based nanoelectronics has been initiated at the U.S. Army Research Laboratory (ARL) under the
auspices of the ARL Director’s Strategic Initiative (DSI). An array of capabilities for graphene growth, characterization, device
fabrication, and device modeling has been established, and expertise has been gained in all facets of the research. Significant
results have been achieved, including the world’s highest reported fT for a graphene field-effect transistor (GFET) fabricated
from chemical vapor deposition (CVD)-grown graphene; and a first-generation graphene-based supercapacitor. This research
could potentially have enormous benefits for the American Soldier including smaller and more efficient power electronics and
communication systems, transparent and flexible electronics, and wearable electronics.

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