| 查看: 1080 | 回复: 10 | ||
| 【奖励】 本帖被评价10次，作者flbwlx增加金币 10 个 | ||
| 当前主题已经存档。 | ||
[资源]
III-N 族半导体化合物《Nitride Semiconductors》
|
||
|
本书是研究III-N 族半导体化合物材料和器件的一本不错的资料《Nitride Semiconductors》Handbook on Materials and Device 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1.High-Pressure Crystallization of GaN 2.Epitaxial Lateral Overgrowth of GaN 3.Plasma-Assisted Molecular Beam Epitaxy of III–V Nitrides 4.Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy 5.Growth and Properties of InN 6.Surface Structure and Adatom Kinetics of Group-III Nitrides 7.Topological Analysis of Defects in Nitride Semiconductors 8.Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms 9.Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers 10.Ohmic Contacts to GaN 11.Electroluminescent Diodes and Laser Diodes 12.GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors 13.GaN-Based UV Photodetectors http://www.namipan.com/d/ce69b3e ... d20d655f285f8e5c001 |
回复此楼
2楼2008-10-11 11:01:22
3楼2008-10-13 09:00:30
4楼2008-10-13 10:39:03
6楼2008-10-24 00:43:07
7楼2008-10-26 14:23:14
简单回复
2008-10-17 12:14
回复
