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G_rampus

新虫 (初入文坛)

应助: 0 (幼儿园)
金币: 223
散金: 10
帖子: 5
在线: 8.8小时
虫号: 2746881
注册: 2013-10-23
专业: 凝聚态物性 II ：电子结构

[求助] 第一次投搞就被拒，导师想再argue一下，审稿人意见如下，跪求各位大牛指点

15年10月初投的，赶上圣诞节，审了快3个月了，前两天收到拒信，如下：
Dear Prof ,

Your manuscript entitled "XXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXX" has now been seen by 2 referees, whose comments are appended below. In the light of their advice I regret to inform you that we cannot publish your manuscript in Nature Communications.

You will see that, while the reviewers find your work of interest, they raise concerns that cast doubt on the advance your findings represent over earlier work and the strength of the novel conclusions that can be drawn at this stage. Unfortunately, these reservations are sufficiently important to preclude publication of this study in Nature Communications.

I am sorry that we cannot be more positive on this occasion and thank you for the opportunity to consider your work.

Reviewers' comments:

Reviewer #1 (Remarks to the Author):

The authors show experimentally that XXXXXX structure trigged by electric pulse and laser has as a non-volatile photoelectric effect. The experimental results are simulated in a device model. This paper has its main readers in a specialized device journal e.g. in the IEEE journals. The results are interesting but much stronger evidence for the realistic functioning for a high density non-volatile memory is required (as claimed by the authors).

Reviewer #2 (Remarks to the Author):

Zhou et al., reports on combined laser and electric pulse induced non-volatile switching effects in XXXX structures with XXXXXXX surface

I find experiments to be interesting and worth to publish. However, in my view, authors over claim priority of their main finding.

1. Among the most important claims is that the authors are the first to control no volatilely the Shottky barrier. However, such effects have been already seen before. To mention few, recent papers by Dongri Qiu & Eun Kyu Kim reports on "Electrically Tunable Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors" ( SREP-2015). Nonvolatile changes in Schotty barrier occur also at metal-organic molecules interfaces ( see Nature Materials 2008 https://www.nature.com/nmat/journal/v7/n7/full/nmat2207.html) etc.

2. Authors claim that they open avenues to novel nonvolatile memory seems for me over-optimistic. For example, such memory will be overheated due to large voltages used to switch PV

More technical comments:

It is not clear which duration laser pulses have. If I take as 1 second, then an estimated power normalized by the surface exceeds in 1000 times one of the sun on earth. In such conditions, author's suggestion to keep temperature constant in modelling seems to be foo simplified. I recommend the authors to estimate or simulate the temperature increase.

The reported effects remain nearly constant from 20V down to 5V pulse amplitude (for example for 2.2 nm coverage, see Figure 1b)) . What happens below 5V amplitude?

How PV is measured? From the same contacts which provide voltage pulses? If yes, how external circuit for application of voltage pulses is insulated from PV measurement system?

Did authors tried to measure PV from contacts at some distance from the point where laser pulses are applied?

Finally, I recommend the authors to correct small technical errors in the paper such as low upper cases and improve fluidity of the text and English
以上为审稿人意见，导师说第一个审稿人理解有偏差，我们文章的主题并不是冲着器件物理去的，而是重在突出物理现象。导师认为第二个审稿人的意见还有些正面，因此想argue一下，请问诸位学长师兄，这种情况argue有可能成功吗？应该注意什么？

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