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yangruirui(½ð±Ò+1,VIP+0): 5-1 18:11
yangruirui(½ð±Ò+1,VIP+0): 5-1 18:11
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http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaAs/index.html GaAs Basic Parameters at 300 K Band structure and carrier concentration Basic Parameters of Band Structure and carrier concentration Temperature Dependences Energy Gap Narrowing at High Doping Levels Effective Masses and Density of States Donors and Acceptors Electrical Properties Basic Parameters of Electrical Properties Mobility and Hall Effect Transport Properties in High Electric Fields Impact Ionization Recombination Parameters Optical properties Thermal properties Mechanical properties, elastic constants, lattice vibrations Basic Parameters Elastic Constants Acoustic Wave Speeds Phonon Frequencies References |

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