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5Â¥2015-10-22 21:37:23
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ÆäʵÕâÒ²¾ÍÊÇÒ»ÖÖ²ôÔÓ¡£ÎÒ¸øÄãÌṩһƪ²Î¿¼ÎÄÏ×£¬GeTe²ôBi2Te3£¬Ï£ÍûÓаïÖú£º Wu, D., et al. (2014). "Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi2Te3 Doping." J Am Chem Soc 136(32): 11412-11419. As a lead-free material, GeTe has drawn growing attention in thermoelectrics, and a figure of merit (ZT) close to unity was previously obtained via traditional doping/alloying, largely through hole carrier concentration tuning. In this report, we show that a remarkably high ZT of approximately 1.9 can be achieved at 773 K in Ge0.87Pb0.13Te upon the introduction of 3 mol % Bi2Te3. Bismuth telluride promotes the solubility of PbTe in the GeTe matrix, thus leading to a significantly reduced thermal conductivity. At the same time, it enhances the thermopower by activating a much higher fraction of charge transport from the highly degenerate Sigma valence band, as evidenced by density functional theory calculations. These mechanisms are incorporated and discussed in a three-band (L + Sigma + C) model and are found to explain the experimental results well. Analysis of the detailed microstructure (including rhombohedral twin structures) in Ge0.87Pb0.13Te + 3 mol % Bi2Te3 was carried out using transmission electron microscopy and crystallographic group theory. The complex microstructure explains the reduced lattice thermal conductivity and electrical conductivity as well. |

2Â¥2015-10-08 16:29:32
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3Â¥2015-10-09 16:41:04
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