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(2015)Frontiers of Graphene and Carbon Nanotubes Devices and Applications 已有2人参与
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Frontiers of Graphene and Carbon Nanotubes - Devices and Applications 出版社: Springer Verlag, Japan; 2015 (2015年3月25日) 编者：Kazuhiko Matsumoto 精装: 289页 语种： 英语 ISBN: 4431553711 条形码: 9784431553717 商品尺寸: 23.4 x 15.6 x 1.9 cm ASIN: 4431553711 This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials. This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes. It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development. Part I Graphene 1 CVD Growth of High-Quality Single-Layer Graphene . . . . . . . . . . . . . . . . 3 Hiroki Ago 2 Graphene Laser Irradiation CVD Growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Yasuhide Ohno, Kenzo Maehashi, and Kazuhiko Matsumoto 3 Graphene Direct Growth on Si=SiO2 Substrates. . . . . . . . . . . . . . . . . . . . . . . . 29 Yasuhide Ohno, Kenzo Maehashi, and Kazuhiko Matsumoto 4 Direct Growth of Graphene and Graphene Nanoribbon on an Insulating Substrate by Rapid-Heating Plasma CVD. . . . . . . . . . . 37 Toshiaki Kato, Rikizo Hatakeyama, and Toshiro Kaneko 5 Graphene/Metal Contact . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Kosuke Nagashio and Akira Toriumi 6 Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field-Effect Transistors Using Transfer-Free Processes for Future LSIs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 Daiyu Kondo and Shintaro Sato 7 Graphene Biosensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Yasuhide Ohno, Kenzo Maehashi, and Kazuhiko Matsumoto 8 Graphene Terahertz Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Taiichi Otsuji Part II Carbon Nanotube (CNT) 9 Carbon Nanotube Synthesis and the Role of Catalyst .. . . . . . . . . . . . . . . . . 125 Yoshikazu Homma 10 Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2=Si Substrates. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 Yasuhide Ohno, Takafumi Kamimura, Kenzo Maehashi, Koichi Inoue, and Kazuhiko Matsumoto 11 Plasma Doping Processes for CNT Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 Rikizo Hatakeyama, Toshiaki Kato, Yongfeng Li, and Toshiro Kaneko 12 Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 Yasuhide Ohno, Kenzo Maehashi, and Kazuhiko Matsumoto 13 Electrochemical Biological Sensors Based on Directly Synthesized Carbon Nanotube Electrodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179 Kenzo Maehashi, Kazuhiko Matsumoto, Yuzuru Takamura, and Eiichi Tamiya 14 Nanomechanical Application of CNT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 Seiji Akita 15 Carbon Nanotube Quantum Nanomemory .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 Takafumi Kamimura, Yasuhide Ohno, Kenzo Maehashi, and Kazuhiko Matsumoto 16 Control of Particle Nature andWave Nature of Electron in CNT . . . . 213 Takafumi Kamimura and Kazuhiko Matsumoto 17 Quantum-Dot Devices with Carbon Nanotubes . . . . . . . . . . . . . . . . . . . . . . . . . 241 Koji Ishibashi 18 High-Mobility Thin-Film Transistors for Flexible Electronics Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269 Yutaka Ohno Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285  41qn-Jv-dzL.jpg |
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