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centered ÌåÐÄÁ¢·½ Body-centred cubic structure ÌåÁ¢ÐĽṹ Boltzmann ²¨¶û×ÈÂü Bond ¼ü¡¢¼üºÏ Bonding electron ¼Ûµç×Ó Bonding pad ¼üºÏµã Bootstrap circuit ×Ô¾Ùµç· Bootstrapped emitter follower ×Ô¾ÙÉ伫¸úËæÆ÷Boron Åð Borosilicate glass Åð¹è²£Á§ Boundary condition ±ß½çÌõ¼þ Bound electron Êø¸¿µç×Ó Breadboard Ä£Äâ°å¡¢ÊµÑé°å Break down »÷´© Break over תÕÛ Brillouin ²¼ÀïÔ¨ Brillouin zone ²¼ÀïÔ¨Çø Built-in ÄÚ½¨µÄ Build-in electric field ÄÚ½¨µç³¡ Bulk Ìå/ÌåÄÚ Bulk absorption ÌåÎüÊÕ Bulk generation Ìå²úÉú Bulk recombination Ì帴ºÏ Burn - in ÀÏ»¯ Burn out ÉÕ»Ù Buried channel Âñ¹µ Buried diffusion region ÒþÂñÀ©É¢Çø Can Íâ¿Ç Capacitance µçÈÝ Capture cross section ·ý»ñ½ØÃæ Capture carrier ·ý»ñÔØÁ÷×Ó Carrier ÔØÁ÷×Ó¡¢Ôز¨ Carry bit ½øÎ»Î» Carry-in bit ½øÎ»ÊäÈë Carry-out bit ½øÎ»Êä³ö Cascade ¼¶Áª Case ¹Ü¿Ç Cathode Òõ¼« Center ÖÐÐÄ Ceramic ÌÕ´É£¨µÄ£© Channel ¹µµÀ Channel breakdown ¹µµÀ»÷´© Channel current ¹µµÀµçÁ÷ Channel doping ¹µµÀ²ôÔÓ Channel shortening ¹µµÀËõ¶Ì Channel width ¹µµÀ¿í¶È Characteristic impedance ÌØÕ÷×迹 Charge µçºÉ¡¢³äµç Charge-compensation effects µçºÉ²¹³¥Ð§Ó¦ Charge conservation µçºÉÊØºã Charge neutrality condition µçÖÐÐÔÌõ¼þ Charge drive/exchange/sharing/transfer/storage µçºÉÇý¶¯/½»»»/¹²Ïí/×ªÒÆ/´æ´¢ Chemmical etching »¯Ñ§¸¯Ê´·¨ Chemically-Polish »¯Ñ§Å×¹â Chemmically-Mechanically Polish (CMP) »¯Ñ§»úеÅ×¹â Chip оƬ Chip yield оƬ³ÉÆ·ÂÊ Clamped óéλ Clamping diode óéλ¶þ¼«¹Ü Cleavage plane ½âÀíÃæ Clock rate ʱÖÓÆµÂÊ Clock generator ʱÖÓ·¢ÉúÆ÷ Clock flip-flop ʱÖÓ´¥·¢Æ÷ Close-packed structure Ãܶѻý½á¹¹ Close-loop gain ±Õ»·ÔöÒæ Collector ¼¯µç¼« Collision Åöײ Compensated OP-AMP ²¹³¥ÔË·Å Common-base/collector/emitter connection ¹²»ù¼«/¼¯µç¼«/·¢É伫Á¬½Ó Common-gate/drain/source connection ¹²Õ¤/©/Ô´Á¬½Ó Common-mode gain ¹²Ä£ÔöÒæ Common-mode input ¹²Ä£ÊäÈë Common-mode rejection ratio (CMRR) ¹²Ä£ÒÖÖÆ±È Compatibility ¼æÈÝÐÔ Compensation ²¹³¥ Compensated impurities ²¹³¥ÔÓÖÊ Compensated semiconductor ²¹³¥°ëµ¼Ìå Complementary Darlington circuit »¥²¹´ïÁÖ¶Ùµç· Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) »¥²¹½ðÊôÑõ»¯Îï°ëµ¼Ì峡ЧӦ¾§Ìå¹Ü Complementary error function ÓàÎó²îº¯Êý Computer-aided design (CAD)/test(CAT)/manufacture(CAM) ¼ÆËã»ú¸¨ÖúÉè¼Æ/ ²âÊÔ /ÖÆ Ôì Compound Semiconductor »¯ºÏÎï°ëµ¼Ìå Conductance µçµ¼ Conduction band (edge) µ¼´ø(µ×) Conduction level/state µ¼´øÌ¬ Conductor µ¼Ìå Conductivity µçµ¼ÂÊ Configuration ×é̬ Conlomb ¿âÂØ Conpled Configuration Devices ½á¹¹×é̬ Constants ÎïÀí³£Êý Constant energy surface µÈÄÜÃæ Constant-source diffusionºã¶¨Ô´À©É¢ Contact ½Ó´¥ Contamination ÖÎÎÛ Continuity equation Á¬ÐøÐÔ·½³Ì Contact hole ½Ó´¥¿× Contact potential ½Ó´¥µçÊÆ Continuity condition Á¬ÐøÐÔÌõ¼þ Contra doping ·´²ôÔÓ Controlled ÊÜ¿ØµÄ Converter ת»»Æ÷ Conveyer ´«ÊäÆ÷ Copper interconnection system Í»¥Á¬ÏµÍ³Couping ñîºÏ Covalent ¹²½×µÄ Crossover ¿ç½» Critical ÁÙ½çµÄ Crossunder ´©½» CrucibleÛáÛö Crystal defect/face/orientation/lattice ¾§ÌåȱÏÝ/¾§Ãæ/¾§Ïò/¾§ ¸ñ Current density µçÁ÷ÃÜ¶È Curvature ÇúÂÊ Cut off ½ØÖ¹ Current drift/dirve/sharing µçÁ÷Æ¯ÒÆ/Çý¶¯/¹²Ïí Current Sense µçÁ÷È¡Ñù Curvature ÍäÇú Custom integrated circuit ¶¨ÖƼ¯³Éµç· Cylindrical ÖùÃæµÄ Czochralshicrystal Ö±Á¢µ¥¾§ Czochralski technique ÇпËÀÍ˹»ù¼¼Êõ£¨Cz·¨Ö±À¾§ÌåJ£© Dangling bonds Ðü¹Ò¼ü Dark current °µµçÁ÷ Dead time ¿ÕÔØÊ±¼ä Debye length µÂ°Ý³¤¶È De.broglie µÂ²¼ÂåÒâ Decderate ¼õËÙ Decibel (dB) ·Ö±´ Decode ÒëÂë Deep acceptor level ÉîÊÜÖ÷Äܼ¶ Deep donor level ÉîÊ©Ö÷Äܼ¶ Deep impurity level Éî¶ÈÔÓÖÊÄܼ¶ Deep trap ÉîÏÝÚå Defeat ȱÏÝ Degenerate semiconductor ¼ò²¢°ëµ¼Ìå Degeneracy ¼ò²¢¶È Degradation ÍË»¯ Degree Celsius(centigrade) /Kelvin ÉãÊÏ/¿ªÊÏÎÂ¶È Delay ÑÓ³Ù Density ÃÜ¶È Density of states ̬ÃÜ¶È Depletion ºÄ¾¡ Depletion approximation ºÄ¾¡½üËÆ Depletion contact ºÄ¾¡½Ó´¥ Depletion depth ºÄ¾¡Éî¶È Depletion effect ºÄ¾¡Ð§Ó¦ Depletion layer ºÄ¾¡²ã Depletion MOS ºÄ¾¡MOS Depletion region ºÄ¾¡Çø Deposited film µí»ý±¡Ä¤ Deposition process µí»ý¹¤ÒÕ Design rules Éè¼Æ¹æÔò Die оƬ£¨¸´Êýdice£© Diode ¶þ¼«¹Ü Dielectric ½éµçµÄ Dielectric isolation ½éÖʸôÀë Difference-mode input ²îÄ£ÊäÈë Differential amplifier ²î·Ö·Å´óÆ÷ Differential capacitance ΢·ÖµçÈÝ Diffused junction À©É¢½á Diffusion À©É¢ Diffusion coefficient À©É¢ÏµÊý Diffusion constant À©É¢³£Êý Diffusivity À©É¢ÂÊ Diffusion capacitance/barrier/current/furnace À©É¢µçÈÝ/ÊÆÀÝ/µçÁ÷/¯ Digital circuit Êý×Öµç· Dipole domain ż¼«³ë Dipole layer ż¼«²ã Direct-coupling Ö±½ÓñîºÏ Direct-gap semiconductor Ö±½Ó´øÏ¶°ëµ¼Ìå Direct transition Ö±½ÓԾǨ Discharge ·Åµç Discrete component ·ÖÁ¢Ôª¼þ Dissipation ºÄÉ¢ Distribution ·Ö²¼ Distributed capacitance ·Ö²¼µçÈÝ Distributed model ·Ö²¼Ä£ÐÍ Displacement Î»ÒÆ Dislocation λ´í Domain ³ë Donor Ê©Ö÷ Donor exhaustion Ê©Ö÷ºÄ¾¡ Dopant ²ôÔÓ¼Á Doped semiconductor ²ôÔÓ°ëµ¼Ìå Doping concentration ²ôÔÓŨ¶È Double-diffusive MOS(DMOS)Ë«À©É¢MOS. Drift Æ¯ÒÆ Drift field Æ¯ÒÆµç³¡ Drift mobility Ç¨ÒÆÂÊ Dry etching ¸É·¨¸¯Ê´ Dry/wet oxidation ¸É/ʪ·¨Ñõ»¯ Dose ¼ÁÁ¿ Duty cycle ¹¤×÷ÖÜÆÚ Dual-in-line package £¨DIP£© Ë«ÁÐÖ±²åʽ·â×° Dynamics ¶¯Ì¬ Dynamic characteristics ¶¯Ì¬ÊôÐÔ Dynamic impedance ¶¯Ì¬×迹 Early effect ¶òÀûЧӦ Early failure ÔçÆÚʧЧ Effective mass ÓÐЧÖÊÁ¿ Einstein relation(ship) °®Òò˹̹¹ØÏµ Electric Erase Programmable Read Only Memory(E2PROM) Ò»´ÎÐÔµç¿É²Á³ýÖ»¶Á´æ´¢Æ÷ Electrode µç¼« Electrominggratim µçÇ¨ÒÆ Electron affinity µç×ÓÇ׺ÍÊÆ Electronic -grade µç×ÓÄÜ Electron-beam photo-resist exposure ¹âÖ¿¹Ê´¼ÁµÄµç×ÓÊøÆØ¹â Electron gas µç×ÓÆø Electron-grade water µç×Ó¼¶´¿Ë® Electron trapping center µç×Ó·ý»ñÖÐÐÄ Electron Volt (eV) µç×Ó·ü Electrostatic ¾²µçµÄ Element ÔªËØ/Ôª¼þ/Åä¼þ Elemental semiconductor ÔªËØ°ëµ¼Ìå Ellipse ÍÖÔ² Ellipsoid ÍÖÇò Emitter ·¢É伫 Emitter-coupled logic ·¢É伫ñîºÏÂß¼Emitter-coupled pair ·¢É伫ñîºÏ¶Ô Emitter follower ÉäËæÆ÷ Empty band ¿Õ´ø Emitter crowding effect ·¢É伫¼¯±ß£¨Óµ¼·£©Ð§Ó¦ Endurance test =life test ÊÙÃü²âÊÔ Energy state ÄÜ̬ Energy momentum diagram ÄÜÁ¿-¶¯Á¿(E-K)ͼ Enhancement mode ÔöÇ¿ÐÍģʽ Enhancement MOS ÔöÇ¿ÐÔMOS Entefic (µÍ)¹²ÈÜµÄ Environmental test »·¾³²âÊÔ Epitaxial ÍâÑ Epitaxial layer ÍâÑÓ²ã Epitaxial slice ÍâÑÓÆ¬ Expitaxy ÍâÑÓ Equivalent curcuit µÈЧµç· Equilibrium majority /minority carriers ƽºâ¶àÊý/ÉÙÊýÔØÁ÷×Ó Erasable Programmable ROM (EPROM)¿É²ëÈ¡£¨±à³Ì£©´æ´¢Æ÷ Error function complement ÓàÎó²îº¯Êý Etch ¿ÌÊ´ Etchant ¿ÌÊ´¼Á Etching mask ¿¹Ê´¼ÁÑÚÄ£ Excess carrier ¹ýÊ£ÔØÁ÷×Ó Excitation energy ¼¤·¢ÄÜ Excited state ¼¤·¢Ì¬ Exciton ¼¤×Ó Extrapolation ÍâÍÆ·¨ Extrinsic ·Ç±¾Õ÷µÄ Extrinsic semiconductor ÔÓÖʰ뵼Ìå Face - centered ÃæÐÄÁ¢·½ Fall time ϽµÊ±¼ä Fan-in ÉÈÈë Fan-out Éȳö Fast recovery ¿ì»Ö¸´ Fast surface states ¿ì½çÃæÌ¬ Feedback ·´À¡ Fermi level ·ÑÃ×Äܼ¶ Fermi-Dirac Distribution ·ÑÃ×-µÒÀ¿Ë·Ö²¼ Femi potential ·ÑÃ×ÊÆ Fick equation ·Æ¿Ë·½³Ì£¨À©É¢£© Field effect transistor ³¡Ð§Ó¦¾§Ìå¹Ü Field oxide ³¡Ñõ»¯²ã Filled band Âú´ø Film ±¡Ä¤ Flash memory ÉÁ˸´æ´¢Æ÷ Flat band ƽ´ø Flat pack ±âƽ·â×° Flicker noise ÉÁ˸£¨±ä£©ÔëÉù Flip-flop toggle ´¥·¢Æ÷·×ª Floating gate ¸¡Õ¤ Fluoride etch ·ú»¯Çâ¿ÌÊ´ Forbidden band ½û´ø Forward bias ÕýÏòÆ«Öà Forward blocking /conductingÕýÏò×è¶Ï/µ¼Í¨ Frequency deviation noiseƵÂÊÆ¯ÒÆÔëÉù Frequency response ƵÂÊÏìÓ¦ Function º¯Êý Gain ÔöÒæ Gallium-Arsenide(GaAs) É黯¼Ø Gamy ray r ÉäÏß Gate ÃÅ¡¢Õ¤¡¢¿ØÖƼ« Gate oxide Õ¤Ñõ»¯²ã Gauss£¨ian£© ¸ß˹ Gaussian distribution profile ¸ß˹²ôÔÓ·Ö²¼Generation-recombination ²úÉú-¸´ºÏ Geometries ¼¸ºÎ³ß´ç Germanium(Ge) Õà Graded »º±äµÄ Graded (gradual) channel »º±ä¹µµÀ Graded junction »º±ä½á Grain ¾§Á£ Gradient ÌÝ¶È Grown junction Éú³¤½á Guard ring ±£»¤»· Gummel-Poom model ¸ðı-ÅË Ä£ÐÍ Gunn - effect µÒÊÏЧӦ Hardened device ·øÉä¼Ó¹ÌÆ÷¼þ Heat of formation ÐγÉÈÈ Heat sink É¢ÈÈÆ÷¡¢ÈȳÁ Heavy/light hole band ÖØ/Çá ¿ÕѨ´ø Heavy saturation ÖØ²ôÔÓ Hell - effect »ô¶ûЧӦ Heterojunction ÒìÖʽá Heterojunction structure ÒìÖʽá½á¹¹ Heterojunction Bipolar Transistor£¨HBT£©ÒìÖʽáË«¼«Ð;§Ìå High field property ¸ß³¡ÌØÐÔ High-performance MOS.( H-MOS)¸ßÐÔÄÜMOS. Hormalized ¹éÒ»»¯ Horizontal epitaxial reactor ÎÔʽÍâÑÓ·´Ó¦Æ÷ Hot carrior ÈÈÔØÁ÷×Ó Hybrid integration »ìºÏ¼¯³É Image - force ¾µÏóÁ¦ Impact ionization ÅöײµçÀë Impedance ×迹 Imperfect structure ²»ÍêÕû½á¹¹ Implantation dose ×¢Èë¼ÁÁ¿ Implanted ion ×¢ÈëÀë×Ó Impurity ÔÓÖÊ Impurity scattering ÔÓ־ɢÉä Incremental resistance µç×èÔöÁ¿£¨Î¢·Öµç×裩In-contact mask ½Ó´¥Ê½ÑÚÄ£ Indium tin oxide (ITO) î÷ÎýÑõ»¯Îï Induced channel ¸ÐÓ¦¹µµÀ Infrared ºìÍâµÄ Injection ×¢Èë Input offset voltage ÊäÈëʧµ÷µçѹ Insulator ¾øÔµÌå Insulated Gate FET(IGFET)¾øÔµÕ¤FET Integrated injection logic¼¯³É×¢ÈëÂß¼ Integration ¼¯³É¡¢»ý·Ö Interconnection »¥Á¬ Interconnection time delay »¥Á¬ÑÓʱ Interdigitated structure ½»»¥Ê½½á¹¹ Interface ½çÃæ Interference ¸ÉÉæ International system of unions¹ú¼Êµ¥Î»ÖÆ Internally scattering ¹È¼äÉ¢Éä Interpolation Äڲ巨 Intrinsic ±¾Õ÷µÄ Intrinsic semiconductor ±¾Õ÷°ëµ¼Ìå Inverse operation ·´Ïò¹¤×÷ Inversion ·´ÐÍ Inverter µ¹ÏàÆ÷ Ion Àë×Ó Ion beam Àë×ÓÊø Ion etching Àë×Ó¿ÌÊ´ Ion implantation Àë×Ó×¢Èë Ionization µçÀë Ionization energy µçÀëÄÜ Irradiation ·øÕÕ Isolation land ¸ôÀ뵺 Isotropic ¸÷ÏòͬÐÔ Junction FET(JFET) ½áÐͳ¡Ð§Ó¦¹Ü Junction isolation ½á¸ôÀë Junction spacing ½á¼ä¾à Junction side-wall ½á²à±Ú Latch up ±ÕËø Lateral ºáÏòµÄ Lattice ¾§¸ñ Layout °æÍ¼ Lattice binding/cell/constant/defect/distortion ¾§¸ñ½áºÏÁ¦/¾§°û/¾§¸ñ/¾§¸ñ³£Êì /¾§¸ñȱÏÝ/¾§¸ñ»û±ä Leakage current £¨Ð¹£©Â©µçÁ÷ Level shifting µçÆ½ÒÆ¶¯ Life time ÊÙÃü linearity ÏßÐÔ¶È Linked bond ¹²¼Û¼ü Liquid Nitrogen Òºµª Liquid£phase epitaxial growth technique ÒºÏàÍâÑÓÉú³¤¼¼Êõ Lithography ¹â¿Ì Light Emitting Diode(LED) ·¢¹â¶þ¼«¹Ü Load line or Variable ¸ºÔØÏß Locating and Wiring ²¼¾Ö²¼Ïß Longitudinal ×ÝÏòµÄ Logic swing Âß¼°Ú·ù Lorentz ÂåÂÙ×È Lumped model ¼¯×ÜÄ£ÐÍ Majority carrier ¶àÊýÔØÁ÷×Ó Mask ÑÚĤ°å£¬¹â¿Ì°å Mask level ÑÚÄ£ÐòºÅ Mask set ÑÚÄ£×é Mass - action lawÖÊÁ¿Êغ㶨ÂÉ Master-slave D flip-flopÖ÷´ÓD´¥·¢Æ÷ Matching Æ¥Åä Maxwell Âó¿Ë˹Τ Mean free path ƽ¾ù×ÔÓÉ³Ì Meandered emitter junctionÊá×´·¢É伫½á Mean time before failure (MTBF) ƽ¾ù¹¤×÷ʱ¼ä Megeto - resistance ´Å×è Mesa Ì¨Ãæ MESFET-Metal Semiconductor½ðÊô°ëµ¼ÌåFET Metallization ½ðÊô»¯ Microelectronic technique ΢µç×Ó¼¼Êõ Microelectronics ΢µç×Óѧ Millen indices ÃÜÀÕÖ¸Êý Minority carrier ÉÙÊýÔØÁ÷×Ó Misfit ʧÅä Mismatching ʧÅä Mobile ions ¿É¶¯Àë×Ó Mobility Ç¨ÒÆÂÊ Module Ä£¿é Modulate µ÷ÖÆ Molecular crystal·Ö×Ó¾§Ìå Monolithic IC µ¥Æ¬IC MOSFET½ðÊôÑõ»¯Îï°ëµ¼Ì峡ЧӦ¾§Ìå¹Ü Mos. Transistor(MOST )MOS. ¾§Ìå¹Ü Multiplication ±¶Ôö Modulator µ÷ÖÆ Multi-chip IC ¶àоƬIC Multi-chip module(MCM) ¶àоƬģ¿é Multiplication coefficient±¶ÔöÒò×Ó Naked chip δ·â×°µÄоƬ£¨ÂãÆ¬£© Negative feedback ¸º·´À¡ Negative resistance ¸º×è Nesting Ì×¿Ì Negative-temperature-coefficient ¸ºÎ¶ÈϵÊý Noise margin ÔëÉùÈÝÏÞ Nonequilibrium ·Çƽºâ Nonrolatile ·Ç»Ó·¢£¨Ò×ʧ£©ÐÔ Normally off/on ³£±Õ/¿ª Numerical analysis ÊýÖµ·ÖÎö Occupied band Âú´ø Officienay ¹¦ÂÊ Offset Æ«ÒÆ¡¢Ê§µ÷ On standby ´ýÃü״̬ Ohmic contact Å·Ä·½Ó´¥ Open circuit ¿ªÂ· Operating point ¹¤×÷µã Operating bias ¹¤×÷Æ«Öà Operational amplifier (OPAMP)ÔËËã·Å´óÆ÷ Optical photon =photon ¹â×Ó Optical quenching¹ââ§Ãð Optical transition ¹âԾǨ Optical-coupled isolator¹âñîºÏ¸ôÀëÆ÷ Organic semiconductorÓлú°ëµ¼Ìå Orientation ¾§Ïò¡¢¶¨Ïò Outline ÍâÐÎ Out-of-contact mask·Ç½Ó´¥Ê½ÑÚÄ£ Output characteristic Êä³öÌØÐÔ Output voltage swing Êä³öµçѹ°Ú·ù Overcompensation ¹ý²¹³¥ Over-current protection ¹ýÁ÷±£»¤ Over shoot ¹ý³å Over-voltage protection ¹ýѹ±£»¤ Overlap ½»µü Overload ¹ýÔØ Oscillator Õñµ´Æ÷ Oxide Ñõ»¯Îï Oxidation Ñõ»¯ Oxide passivation Ñõ»¯²ã¶Û»¯ Package ·â×° Pad ѹº¸µã Parameter ²ÎÊý Parasitic effect ¼ÄÉúЧӦ Parasitic oscillation ¼ÄÉúÕñµ´ Passination ¶Û»¯ Passive component ÎÞÔ´Ôª¼þ Passive device ÎÞÔ´Æ÷¼þ Passive surface ¶Û»¯½çÃæ Parasitic transistor ¼ÄÉú¾§Ìå¹Ü Peak-point voltage ·åµãµçѹ Peak voltage ·åÖµµçѹ Permanent-storage circuit ÓÀ¾Ã´æ´¢µç· Period ÖÜÆÚ Periodic table ÖÜÆÚ±í Permeable - base ¿ÉÉøÍ¸»ùÇø Phase-lock loop ËøÏà»· Phase drift ÏàÒÆ Phonon spectra Éù×ÓÆ× Photo conduction ¹âµçµ¼ Photo diode ¹âµç¶þ¼«¹Ü Photoelectric cell ¹âµç³Ø Photoelectric effect ¹âµçЧӦ Photoenic devices ¹â×ÓÆ÷¼þ Photolithographic process ¹â¿Ì¹¤ÒÕ (photo) resist £¨¹âÃô£©¿¹¸¯Ê´¼Á Pin ¹Ü½Å Pinch off ¼Ð¶Ï Pinning of Fermi level ·ÑÃ×Äܼ¶µÄ¶¤Ôú£¨Ð§Ó¦£© Planar process Æ½Ãæ¹¤ÒÕ Planar transistor Æ½Ãæ¾§Ìå¹Ü Plasma µÈÀë×ÓÌå Plezoelectric effect ѹµçЧӦ Poisson equation ²´ËÉ·½³Ì Point contact µã½Ó´¥ Polarity ¼«ÐÔ Polycrystal ¶à¾§ Polymer semiconductor¾ÛºÏÎï°ëµ¼Ìå Poly-silicon ¶à¾§¹è Potential (µç)ÊÆ Potential barrier ÊÆÀÝ Potential well ÊÆÚå Power dissipation ¹¦ºÄ Power transistor ¹¦Âʾ§Ìå¹Ü Preamplifier ǰÖ÷ŴóÆ÷ Primary flat Ö÷Æ½Ãæ Principal axes Ö÷Öá Print-circuit board(PCB) Ó¡ÖÆµç·°å Probability ¼¸ÂÊ Probe ̽Õë Process ¹¤ÒÕ Propagation delay ´«ÊäÑÓʱ Pseudopotential method âßÊÆ·¢ Punch through ´©Í¨ Pulse triggering/modulating Âö³å´¥·¢/µ÷ÖÆPulse Widen Modulator(PWM) Âö³å¿í¶Èµ÷ÖÆ Punchthrough ´©Í¨ Push-pull stage ÍÆÍì¼¶ Quality factor Æ·ÖÊÒò×Ó Quantization Á¿×Ó»¯ Quantum Á¿×Ó Quantum efficiencyÁ¿×ÓЧӦ Quantum mechanics Á¿×ÓÁ¦Ñ§ Quasi ¨C Fermi£level×¼·ÑÃ×Äܼ¶ Quartz ʯӢ Radiation conductivity ·øÉäµçµ¼ÂÊ Radiation damage ·øÉäËðÉË Radiation flux density ·øÉäͨÁ¿ÃÜ¶È Radiation hardening ·øÉä¼Ó¹Ì Radiation protection ·øÉä±£»¤ Radiative - recombination·øÕÕ¸´ºÏ Radioactive ·ÅÉäÐÔ Reach through ´©Í¨ Reactive sputtering source ·´Ó¦½¦ÉäÔ´ Read diode ÀïµÂ¶þ¼«¹Ü Recombination ¸´ºÏ Recovery diode »Ö¸´¶þ¼«¹Ü Reciprocal lattice µ¹ºË×Ó Recovery time »Ö¸´Ê±¼ä Rectifier ÕûÁ÷Æ÷£¨¹Ü£© Rectifying contact ÕûÁ÷½Ó´¥ Reference »ù×¼µã »ù×¼ ²Î¿¼µã Refractive index ÕÛÉäÂÊ Register ¼Ä´æÆ÷ Registration ¶Ô×¼ Regulate ¿ØÖÆ µ÷Õû Relaxation lifetime ³Ûԥʱ¼ä Reliability ¿É¿¿ÐÔ Resonance гÕñ Resistance µç×è Resistor µç×èÆ÷ Resistivity µç×èÂÊ Regulator ÎÈѹ¹Ü£¨Æ÷£© Relaxation ³ÛÔ¥ Resonant frequency¹²É䯵ÂÊ Response time ÏìӦʱ¼ä Reverse ·´ÏòµÄ Reverse bias ·´ÏòÆ«Öà Sampling circuit È¡Ñùµç· Sapphire À¶±¦Ê¯£¨Al2O3£© Satellite valley ÎÀÐÇ¹È Saturated current rangeµçÁ÷±¥ºÍÇø Saturation region ±¥ºÍÇø Saturation ±¥ºÍµÄ Scaled down °´±ÈÀýËõС Scattering É¢Éä Schockley diode Ф¿ËÀ³¶þ¼«¹Ü Schottky Ð¤ÌØ»ù Schottky barrier Ð¤ÌØ»ùÊÆÀÝ Schottky contact Ð¤ÌØ»ù½Ó´¥ Schrodingen Ѧ¶¨¶ò Scribing grid »®Æ¬¸ñ Secondary flat ´ÎÆ½Ãæ Seed crystal ×Ѿ§ Segregation ·ÖÄý Selectivity Ñ¡ÔñÐÔ Self aligned ×Ô¶Ô×¼µÄ Self diffusion ×ÔÀ©É¢ Semiconductor °ëµ¼Ìå Semiconductor-controlled rectifier ¿É¿Ø¹è Sendsitivity ÁéÃô¶È Serial ´®ÐÐ/´®Áª Series inductance ´®Áªµç¸Ð Settle time ½¨Á¢Ê±¼ä Sheet resistance ±¡²ãµç×è Shield ÆÁ±Î Short circuit ¶Ì· Shot noise É¢Á£ÔëÉù Shunt ·ÖÁ÷ Sidewall capacitance ±ßǽµçÈÝ Signal ÐźŠSilica glass ʯӢ²£Á§ Silicon ¹è Silicon carbide ̼»¯¹è Silicon dioxide (SiO2) ¶þÑõ»¯¹è Silicon Nitride(Si3N4) µª»¯¹è Silicon On Insulator ¾øÔµ¹è Siliver whiskers ÒøÐë Simple cubic ¼òÁ¢·½ Single crystal µ¥¾§ Sink ³Á Skin effect Ç÷·ôЧӦ Snap time ¼±±äʱ¼ä Sneak path DZÐÐͨ· Sulethreshold ÑÇãÐµÄ Solar battery/cell Ì«ÑôÄÜµç³Ø Solid circuit ¹ÌÌåµç· Solid Solubility ¹ÌÈÜ¶È Sonband ×Ó´ø Source Ô´¼« Source follower Ô´ËæÆ÷ Space charge ¿Õ¼äµçºÉ Specific heat(PT) ÈÈ Speed-power product Ëٶȹ¦ºÄ³Ë»ý Spherical ÇòÃæµÄ Spin ×ÔÐý Split ·ÖÁÑ Spontaneous emission ×Ô·¢·¢Éä Spreading resistanceÀ©Õ¹µç×è Sputter ½¦Éä Stacking fault ²ã´í Static characteristic ¾²Ì¬ÌØÐÔ Stimulated emission Êܼ¤·¢Éä Stimulated recombination Êܼ¤¸´ºÏ Storage time ´æ´¢Ê±¼ä Stress Ó¦Á¦ Straggle Æ«²î Sublimation Éý»ª Substrate ³Äµ× Substitutional ÌæÎ»Ê½µÄ Superlattice ³¬¾§¸ñ Supply µçÔ´ Surface ±íÃæ Surge capacity ÀËÓ¿ÄÜÁ¦ Subscript ϱê Switching time ¿ª¹ØÊ±¼ä Switch ¿ª¹Ø Tailing À©Õ¹ Terminal ÖÕ¶Ë Tensor ÕÅÁ¿ Tensorial ÕÅÁ¿µÄ Thermal activation Èȼ¤·¢ Thermal conductivity Èȵ¼ÂÊ Thermal equilibrium ÈÈÆ½ºâ Thermal Oxidation ÈÈÑõ»¯ Thermal resistance ÈÈ×è Thermal sink ÈȳÁ Thermal velocity ÈÈÔ˶¯ Thermoelectricpovoer βîµç¶¯ÊÆÂÊ Thick-film technique ºñĤ¼¼Êõ Thin-film hybrid IC±¡Ä¤»ìºÏ¼¯³Éµç· Thin-Film Transistor(TFT) ±¡Ä¤¾§Ìå Threshlod ãÐÖµ Thyistor ¾§Õ¢¹Ü Transconductance ¿çµ¼ Transfer characteristic ×ªÒÆÌØÐÔ Transfer electron ×ªÒÆµç×Ó Transfer function ´«Ê亯Êý Transient ˲̬µÄ Transistor aging(stress) ¾§Ìå¹ÜÀÏ»¯ Transit time ¶ÉԽʱ¼ä Transition ԾǨ Transition-metal silica ¹ý¶È½ðÊô¹è»¯Îï Transition probability ԾǨ¼¸ÂÊ Transition region ¹ý¶ÉÇø Transport ÊäÔË Transverse ºáÏòµÄ Trap ÏÝÚå Trapping ·ý»ñ Trapped charge ÏÝÚåµçºÉ Triangle generator Èý½Ç²¨·¢ÉúÆ÷ Triboelectricity Ħ²Áµç Trigger ´¥·¢ Trim µ÷Åä µ÷Õû Triple diffusion ÈýÖØÀ©É¢ Truth table ÕæÖµ±í Tolerahce Èݲî Tunnel(ing) ËíµÀ£¨´©£© Tunnel current ËíµÀµçÁ÷ Turn over תÕÛ Turn - off time ¹Ø¶Ïʱ¼ä Ultraviolet ×ÏÍâµÄ Unijunction µ¥½áµÄ Unipolar µ¥¼«µÄ Unit cell Ô£¨Ôª£©°û Unity-gain frequency µ¥Î»Ôö񾮵ÂÊ Unilateral-switchµ¥Ïò¿ª¹Ø Vacancy ¿Õλ Vacuum Õæ¿Õ Valence(value) band ¼Û´ø Value band edge ¼Û´ø¶¥ Valence bond ¼Û¼ü Vapour phase ÆûÏà Varactor ±äÈÝ¹Ü Varistor ±ä×èÆ÷ Vibration Õñ¶¯ Voltage µçѹ Wafer ¾§Æ¬ Wave equation ²¨¶¯·½³Ì Wave guide ²¨µ¼ Wave number ²¨Êý Wave-particle duality ²¨Á£¶þÏàÐÔ Wear-out ÉÕ»Ù Wire routing ²¼Ïß Work function ¹¦º¯Êý Worst-case device ×Çé¿öÆ÷¼þ Yield ³ÉÆ·ÂÊ Zener breakdown ÆëÄÉ»÷´© Zone melting ÇøÈÛ·¨ TrackbackµØÖ·: http://www.yculblog.com/trackback/0/389330 |
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2Â¥2005-05-20 23:24:50
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