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《Evolution of Thin Film Morphology》-2008新书
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2008新书Evolution of Thin Film Morphology: Modeling and Simulations Matthew Pelliccione and Toh-Ming Lu ISSN 0933-033X ISBN: 978-0-387-75108-5 Springer Berlin Heidelberg New York e-ISBN: 978-0-387-75109-2 @ Springer-Verlag Berlin Heidelberg 2008 Preface: Thin film deposition is the most ubiquitous and critical of the processes used to manufacture high-tech devices such as microprocessors, memories, solar ells, microelectromechanical systems (MEMS), lasers, solid-state lighting, and photovoltaics. The morphology and microstructure of thin films directly controls their optical, magnetic, and electrical properties, which are often significantly different from bulk material properties. Precise control of morphology and microstructure during thin film growth is paramount to producing the desired film quality for specific applications. To date, many thin film deposition techniques have been employed for manufacturing films, including thermal evaporation, sputter deposition, chemical vapor deposition, laser ablation, and electrochemical deposition. The growth of films using these techniques often occurs under highly nonequilibrium conditions (sometimes referred to as far-from-equilibrium), which leads to a rough surface morphology and a complex temporal evolution. As atoms are deposited on a surface, atoms do not arrive at the surface at the same time uniformly across the surface. This random fluctuation, or noise, which is inherent to the deposition process, may create surface growth front roughness. The noise competes with surface smoothing processes, such as surface diffusion, to form a rough morphology if the experiment is performed at a sufficiently low temperature and / or at a high growth rate. In addition, growth front roughness can also be enhanced by growth processes such as geometrical shadowing. Due to the nature of the deposition process, atoms approaching the surface do not always approach in parallel; very often atoms arrive at the surface with an angular distribution. Therefore, some of the incident atoms will be captured at high points on a corrugated surface and may not reach the lower valleys of the surface, resulting in an enhancement of the growth front roughness. A conventional statistical mechanics treatment cannot be used to describe this complex growth phenomenon and as a result, the basic understanding of the dynamics of these systems relies very much on mathematical modeling and simulations. …… Evolution of Thin Film Morphology: Modeling and Simulations(2008).pdf(3.51MB) 91下载： http://www.91files.com/?3SYN5YGI7YA70HB70HQX 纳米盘下载：http://www.namipan.com/d/11b919f ... 5030f1e00e62f163800 顶贴是一种美德! [ Last edited by 江南豪情 on 2008-7-18 at 10:12 ] |
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