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TiO2ºÍZnO¹â´ß»¯½µ½â1,2-¶þ¼×Ñõ»ù±½Öг¬ÑõºÍË«ÑõË®µÄ×÷Óà The formation of superoxide at the surface of band-gap irradiated semiconductor oxides is well-documented [21-24] and accordingly the essential role of dioxygen is assigned to the electron-scavenging properties of this molecule. °ëµ¼Ìå´ø¿íÖ±½ÓÊÜ·øÉ伤·¢ÔÚÆä±íÃæÉú³É³¬Ñõ£¬¶øÑõÆø×÷Ϊµç×Ó²¶»ñÔòÊDZØÒªÌõ¼þ¡£ Obviously superoxide cannot accumulate indefinitely. If it gives backs its electron to the semiconductor or a hydroxyl radical supposed to be formed by water oxidation, its role would be detrimental for the photocatalytic degradation of the pollutant. |
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