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[资源] 稀土金属氧化物半导体材料的微观组织及光电特性（英文版）

Rare-Earth Implanted MOS Devices for Silicon Photonics: Microstructural, Electrical and Optoelectronic Properties (Springer Series in Materials Science, 142)

简介：
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
Table of contents :
目录：
Cover......Page 1
Springer Series in Materials Science, 142......Page 2
Rare-Earth Implanted MOS Devices for Silicon Photonics ......Page 4
Preface......Page 8
Contents......Page 12
Acronyms......Page 16
Symbols......Page 18
1.1 Historical Remarks......Page 21
1.2 Electroluminescence from Si-Based, MOS-Type Light Emitters......Page 23
2.1.1 Layout......Page 25
2.1.2 Rare Earth Implantation......Page 27
2.1.3 Annealing Conditions......Page 29
2.2.1 Intrinsic and Implantation Induced Defects in SiO2......Page 30
2.2.2 Hydrogen and Other Defects in SiON......Page 32
2.2.3 Diffusion of Rare Earth Atoms in SiO2......Page 35
2.3.1 Morphology and Size Distribution......Page 37
2.3.2 The Oxidation State of Rare Earth Clusters......Page 41
3.1.1 The MOS Structure under Fowler–Nordheim Injection......Page 43
3.1.2 Hot Electrons in SiO2......Page 47
3.1.3 Charge Trapping and De-trapping in MNOS Systems......Page 49
3.2.1 The Unimplanted State......Page 51
3.2.2 Annealing Dependence......Page 56
3.2.3 Concentration Dependence......Page 58
3.3.1 Low and High Injection Currents......Page 60
3.3.2 Charge Trapping in Unimplanted and RE-Implanted Structures......Page 61
3.3.3 Annealing Dependence......Page 64
3.3.4 Concentration Dependence......Page 65
3.4 The Charge Trapping and Defect Shell Model......Page 66
3.4.1 Before Charge Injection......Page 67
3.4.2 Physical Processes under High Electric Fields......Page 69
3.4.3 The Different Phases of Charge Injection......Page 70
4.1.1 4f Intrashell Transitions in Trivalent Rare Earth Ions......Page 73
4.1.2 Electroluminescence and Decay Time Measurement Techniques......Page 76
4.1.3 Electroluminescence of Unimplanted MOS Structures......Page 78
4.1.4 Electroluminescence Spectra of Rare Earth Ionsin Silicon Dioxide......Page 79
4.1.4.2 Praseodymium......Page 80
4.1.4.3 Europium......Page 81
4.1.4.4 Gadolinium......Page 82
4.1.4.5 Terbium......Page 83
4.1.4.6 Erbium......Page 84
4.1.4.7 Thulium......Page 85
4.1.4.8 Ytterbium......Page 86
4.2.1 The Excitation Cross Section......Page 87
4.2.2 Colour Shift of the Electroluminescence Spectrum......Page 89
4.3.1 The General Case......Page 92
4.3.2 Cross Relaxation......Page 94
4.3.3 Europium: The Interplay Between Di- and Trivalent Ions......Page 97
4.4.1 Short Time vs. Long Time Annealing......Page 99
4.4.2 Spectral Shifts with Cluster Evolution......Page 102
5.1.1 Definition of Efficiency......Page 105
5.1.2 Efficiency Measurement......Page 107
5.1.3 Pumping of a Two-Level System......Page 108
5.1.4 Strategies for Efficiency Tuning......Page 110
5.2.1 Comparison Between Different Rare Earth Elements......Page 111
5.2.2 The Dark Zone Model......Page 112
5.2.3 The Influence of the Host Matrix......Page 113
5.3.1.1 The Energy Transfer Between Si Nanoclusters and Er......Page 116
5.3.1.2 Electroluminescence......Page 118
5.3.2.1 The Inverse Energy Transfer......Page 121
5.3.2.2 Er Concentration and Annealing Dependence......Page 124
5.3.2.3 Microstructural Development of the Ge–Er System......Page 128
5.3.3 Si and Ge Nanoclusters: A Short Comparison......Page 130
5.4.1 Pumping of Cerium by Gadolinium......Page 131
5.4.2 Pumping of Erbium by Gadolinium......Page 133
5.5 Fluorine Co-Doping......Page 135
6.1.1 Wear-Out Mechanisms in MOS Structures......Page 137
6.1.2 Statistical Description of the Breakdown......Page 139
6.1.3 Charge-to-Breakdown Values Under Constant Current Injection......Page 141
6.2.1 The Electroluminescence Quenching Cross-Section......Page 143
6.2.2 The Electroluminescence Quenching Model......Page 144
6.2.3 The Electroluminescence Reactivation Experiment......Page 146
6.2.4 Temperature-Dependent Electroluminescence Quenching......Page 149
6.2.5 The Anomalous Electroluminescence Quenching Behaviour of Eu......Page 150
6.2.6 Qualitative Model of the Electroluminescence Rise Phenomenon......Page 155
6.3 LOCOS Processing and the Use of DielectricBuffer Layers......Page 159
6.4 Potassium Codoping......Page 161
7.1 Requirements for Si-Based Light Emitters......Page 167
7.2.1 Introduction......Page 169
7.2.2 Si-Based Materials as Passive Transducers......Page 170
7.2.3 The Concept of Direct Fluorescence Analysis......Page 172
7.2.4 Biosensing with Si-Based, Integrated Photonic Circuits......Page 175
References......Page 179
Index......Page 191

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2014-11-29 08:10:35, 2.84 M