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[资源] 采用XPS及AES技术进行表面分析（英文版）

An Introduction to Surface Analysis by XPS and AES
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简介：
Extensively revised and updated with additional material included in existing chapters and new material on angle resolved XPS, surface engineering and complimentary methods. * Includes an accessible introduction to the key spectroscopic techniques in surface analysis. * Provides descriptions of latest instruments and techniques. * Includes a detailed glossary of key surface analysis terms.
目录：
Table of contents :
An Introduction
to Surface Analysis
by XPS and AES......Page 4
Copyright......Page 5
Contents......Page 6
Preface......Page 10
Acknowledgements......Page 12
1.1 Analysis of Surfaces......Page 14
1.2.1 Spectroscopists' notation......Page 16
1.3 X- ray Photoelectron Spectroscopy ( XPS)......Page 18
1.4 Auger Electron Spectroscopy ( AES)......Page 20
1.5 Scanning Auger Microscopy ( SAM)......Page 23
1.6 The Depth of Analysis in Electron Spectroscopy......Page 24
1.7 Comparison of XPS and AES/ SAM......Page 26
Analytical Equipment......Page 27
2.1 The Vacuum System......Page 30
2.2 The Sample......Page 32
2.3.1 The twin anode X- ray source......Page 35
2.3.2 X- ray monochromators......Page 37
2.4 The Electron Gun for AES......Page 41
2.4.1 Electron sources......Page 42
2.5.1 The cylindrical mirror analyser......Page 48
2.5.2 The hemispherical sector analyser......Page 50
2.6.1 Channel electron multipliers......Page 58
2.7 Small Area XPS......Page 60
2.7.1 Lens- defined small area XPS......Page 61
2.8 XPS imaging and Mapping......Page 62
2.8.1 Serial acquisition......Page 63
2.8.2 Parallel acquisition......Page 64
2.9 Lateral Resolution in Smail Area XPS......Page 67
2.10 Angle Resolved XPS......Page 69
3.1 Qualitative Analysis......Page 72
3.1.1 Unwanted features in electron spectra......Page 73
3.1.2 Data acquisition......Page 75
3.2.1 X- ray photoelectron spectroscopy......Page 77
3.2.2 Electron induced Auger electron spectroscopy......Page 79
3.2.3 The Auger parameter......Page 80
3.2.4 Chemical state plots......Page 82
3.2.6 Multiple! splitting......Page 84
3.3 Quantitative Analysis......Page 86
3.3.1 Factors affecting the quantification of electron spectra......Page 87
33.2 Quantification in XPS......Page 88
3.3.3 Quantification in AES......Page 89
4.1.1 Angle resolved electron spectroscopy......Page 92
4.1.1.1 Elastic scattering......Page 99
4.1.1.2 Compositional depth profiles by ARXPS......Page 100
4.1.1.3 Recent advances in ARXPS......Page 102
4.1.2 Variation of analysis depth......Page 104
4.2.1 The sputtering process......Page 106
4.2.2 Experimental method......Page 107
4.23 Sputter yield and etch rate......Page 109
4.2.4 Factors affecting the etch rate......Page 110
4.2.5 Factors affecting the depth resolution......Page 112
4.2.6 Calibration......Page 116
4.2.7 Ion gun design......Page 117
4.3.2 Ball cratering......Page 120
4.4 Conclusions......Page 123
5.2 Metallurgy......Page 126
5.2.1 Grain- boundary segregation......Page 127
5.2.2 Electronic structure of metallic alloys......Page 133
5.2.3 Surface engineering......Page 137
5.3 Corrosion Science......Page 144
5.4 Ceramics and Catalysis......Page 152
5.5.1 Mapping semiconductor devices using AES......Page 156
5.5.2 Depth profiling of semiconductor materials......Page 159
5.5.3 Ultra- thin layers studied by ARXPS......Page 161
5.6 Polymeric Materials......Page 162
5.7 Adhesion Science......Page 170
6 Comparison of XPS and AES with Other
Analytical Techniques......Page 178
6.1 X- ray Analysis in the Electron Microscope......Page 180
6.2 Electron Analysis in the Electron Microscope......Page 183
6.3 Mass Spectrometry for Surface Analysis......Page 185
6.4 Ion Scattering......Page 191
6.5 Concluding Remarks......Page 195
Glossary......Page 196
Bibliography......Page 208
Appendix 1: Auger Electron Energies......Page 216
Appendix 2: Table of Binding Energies Accessible with AlKa Radiation......Page 217
Index......Page 220

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