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火凤翱翔

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[资源] 一些原子层沉积的综述

Atomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating
reactions between gas phase precursor molecules and a solid surface. The self-limiting nature of
the chemical reactions ensures precise film thickness control and excellent step coverage, even on
3D structures with large aspect ratios. At present, ALD is mainly used in the microelectronics
industry, e.g. for growing gate oxides. The excellent conformality that can be achieved with
ALD also renders it a promising candidate for coating porous structures, e.g. for
functionalization of large surface area substrates for catalysis, fuel cells, batteries, supercapacitors,
filtration devices, sensors, membranes etc. This tutorial review focuses on the application of
ALD for catalyst design. Examples are discussed where ALD of TiO2 is used for tailoring the
interior surface of nanoporous films with pore sizes of 4–6 nm, resulting in photocatalytic activity.
In still narrower pores, the ability to deposit chemical elements can be exploited to generate
catalytic sites. In zeolites, ALD of aluminium species enables the generation of acid catalytic
activity.
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wl1070046

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顶一下,感谢分享!
如果有一些semiconductor的ALD综述就更好了
52楼2016-05-15 21:42:38
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一维UA2楼
2014-11-03 08:21   回复  
五星好评  顶一下,感谢分享!
2014-11-03 08:31   回复  
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林紫4楼
2014-11-03 08:43   回复  
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2014-11-03 08:56   回复  
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zhongz066楼
2014-11-03 09:26   回复  
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wjy20117楼
2014-11-03 09:42   回复  
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zxf9848楼
2014-11-03 10:21   回复  
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tainanlic9楼
2014-11-03 14:59   回复  
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tainanlic10楼
2014-11-03 17:12   回复  
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jinpengfei11楼
2014-11-03 18:57   回复  
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2014-11-03 22:11   回复  
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2014-11-04 00:21   回复  
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2014-11-04 08:39   回复  
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