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Alx_Chen

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虫号: 3364474
注册: 2014-08-13
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专业: 无机非金属类高温超导与磁

[求助] 请问这一套流程做下来大概要多少钱

P-type (100) silicon wafer was used as the substrate in this work. After the standard RCA clean (Kern and Puotinen1970), a 12nm-thick thermal oxide was grown at 900°C. A phosphorous-doped polysilicon layer with a thickness of 80nm and a sheet resistance of 40–50 Ω/□ was then deposited onto the oxide layer at 620°C by vertical furnace. An e-beam writer was used to define the pattern of the PSW.After development, the poly- Si wire was created by reactiveion-etching. The line width and length of the PSW are 200nm and 3μm, respectively. 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　

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