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Alx_Chen银虫 (初入文坛)
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[求助]
请问这一套流程做下来大概要多少钱
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P-type (100) silicon wafer was used as the substrate in this work. After the standard RCA clean (Kern and Puotinen1970), a 12nm-thick thermal oxide was grown at 900°C. A phosphorous-doped polysilicon layer with a thickness of 80nm and a sheet resistance of 40–50 Ω/□ was then deposited onto the oxide layer at 620°C by vertical furnace. An e-beam writer was used to define the pattern of the PSW.After development, the poly- Si wire was created by reactiveion-etching. The line width and length of the PSW are 200nm and 3μm, respectively.  图片1.png |
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