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Compared with the mono-substituted1B-TPA, the Tg of3B-TPAwas higher by 76.4 C. The DSC curves of the samples in the first and second heating runs are shown in Figs 1 and 2, respectively. In the first heating run, only compound 1B-TPAexhibited a very small meltingtransition peak at 236.5 C. In the second heating run, only a glass transition could be observed for each compound. This indicates that the compounds exhibited a very low tendency towards crystallization, as no melting peak could be detected, which is ascribed to the starburst structures. Amorphous mate-rials possessing a highTgcould have a better chance to retain film morphology during device operation ¡£TheTdof1B-TPA, 2B-TPAand3B-TPA(corresponding to 5% weight loss under N2 atmosphere) were 438.5, 487.2 and 516.8 C, respectively (Fig. 3). The Td values also showed the same trend as the Tg values, increasing with the rise in the number of dicarbazolyl triphenylethylene substituents. The tri-substituted 3B-TPA possessed the highest Td of up to 516.8 The results indicate that the compounds have a very high thermal stability, including highTgandTd. The thermal stability of organic compounds plays a critical role in both the stability and lifetime of photoelectric devices. Thus, the high level of thermal stability suggests that the synthesized compounds might prove useful for photoelectric materials in fabrication devices. |
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2Â¥2014-10-24 18:25:03
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3Â¥2014-11-03 12:36:52














Compared with the mono-substituted1B-TPA, the Tg of3B-TPAwas higher by 76.4 C. The DSC curves of the samples in the first and second heating runs are shown in Figs 1 and 2, respectively. In the first heating run, only compound 1B-TPAexhibited a very small meltingtransition peak at 236.5 C. In the second heating run, only a glass transition could be observed for each compound. This indicates that the compounds exhibited a very low tendency towards crystallization, as no melting peak could be detected, which is ascribed to the starburst structures. Amorphous mate-rials possessing a highTgcould have a better chance to retain film morphology during device operation ¡£
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