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海天天意

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[资源] Chem Soc Rev 10.20新鲜在线：二维过度金属硫化物可控合成综述

Recent advances in controlled synthesis of twodimensional transition metal dichalcogenides via vapour deposition techniques
Yumeng Shi,a Henan Lib and Lain-Jong Li*a
（13页65篇文献）
In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among
which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual
properties associated with their strictly defined dimensionalities. TMD materials with a generalized
formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely
untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2
have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic
properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including
sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition
technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size,
controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer
TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial
research studies on extending the methodology open up a new way for substitution doping, formation
of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we
will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

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