北京大学刘忠范教授刚刚发表了一篇名为“Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline”的综述文章,全文16页,参考文献50篇。
单层的VIB族过渡金属硫化物,拥有类似石墨烯的结构和可控的能带结构,是一类理想的二维光型材料,可以用于探索一些基础的物理问题,比如谷极化,也可以广泛应用于纳米器件、光电学和光催化的研究。最近,化学气相沉积(CVD)作为一种比传统化学或物理剥离更加有效的制备方法被引入这类材料的合成,能够合成出拥有大面内尺寸、厚薄统一和较高晶体质量的单层MX2。
As structural analogues of graphene but with a sizeable band gap, monolayers of group-VIB transition metal dichalcogenides (MX2, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal two dimensional prototype for exploring fundamental issues in physics such as valley polarization, and for engineering a wide range of nanoelectronic, optoelectronic and photocatalytic applications. Recently, chemical vapour deposition (CVD) was introduced as a more efficient preparation method than traditional chemical or physical exfoliation options, and has allowed for the successful synthesis of large-area MX2 monolayers possessing a large domain size, high thickness uniformity and continuity, and satisfactory crystal quality. This tutorial review therefore focuses on introducing the more recent advances in the CVD growth of MX2 (MoS2, WS2, MoS2(1−x)Se2x etc.) monolayers via the sulphurisation/decomposition of pre-deposited metal-based precursors, or the one-step reaction and deposition of gaseous metal and chalcogen feedstocks. Differences in growth behaviour caused by commonly used amorphous SiO2/Si, and newly adopted insulating single crystal substrates such as sapphire, mica and SrTiO3, are also comparatively presented. Also discussed are the essential parameters that influence the growth of MX2, such as the temperature, the source–substrate distance and the composition of the carrier gas (Ar/H2). Finally, an assessment is provided for viable future pathways for fine-tuning of the domain size and orientation, thickness uniformity, and the bandgap of MX2 and its alloys.![北大刘忠范教授最新大作——气相沉积合成单层过渡金属硫化物]()
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![北大刘忠范教授最新大作——气相沉积合成单层过渡金属硫化物-1]()
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