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（部分）海外计算物理牛(华)人
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本帖内容摘自复旦大学教育部复旦大学量子调控创新引智基地主页林海青 |
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zt970831(金币+2,VIP+0):谢谢您补充的资料：）
zt970831(金币+2,VIP+0):谢谢您补充的资料：）
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我在补充一个吧, 张绳百 Dr. Shengbai Zhang received a B.S. degree in Electrical Engineering from Jilin University, Changchun, China, in 1982; an M.S. in 1985; and a Ph.D. degree in 1989 in Theoretical Condensed Matter Physics from the University of California at Berkeley, under the guidance of Prof. Marvin L. Cohen. From 1988 to 1991, he worked for 2-1/2 years in the Xerox Palo Alto Research Center as a Postdoctoral Research Fellow under Dr. D.J. Chadi, and later under Dr. J.E. Northrup. Dr. Zhang joined the National Renewable Energy Laboratory in 1991 as a Research Associate under Dr. A. Zunger. Dr. Zhang specializes in first-principles studies of: The structural and electronic properties of semiconductor bulk, surfaces, interfaces and related phenomena. These include (at Berkeley) the successful prediction of a high-pressure phase of III-V semiconductors, and the development of the GW quasi-particle method for compound semiconductors based on the Hybertsen-Louie method. This led to the first GW calculation of band offset, band structures of superlattices and small metal clusters, and surface optical properties. At NREL, his study includes the ordering mechanism, pair correlation, and surface segregation of III-V ternary alloys; the structure of stepped semiconductor surfaces; and surface-enhanced dopant solubility. He also carried out the first accurate, first-principles study of vacancies and metastable defects in III-V semiconductor surfaces. The defect properties in various bulk materials. These include (at Xerox) the first demonstration of the shallow to deep (DX) transition of Si in AlGaAs alloy, an important step in establishing the now well-accepted Chadi-Chang negative-U model. The work on native defects and dopants in GaAs is among the first to introduce the concept of atomic chemical potential to define absolute defect formation energies. The work on hydrogen complexes pioneered the theoretical study of hydrogen platelets in silicon. At NREL, his work on CuCl demonstrates for the first time the importance of the Jahn-Teller effect in defect-free semiconductors. The work on ternary chalcopyrites explains the unique, defect-tolerant behavior of the chalcopyrites by spontaneous formation of defect pairs and ordered defect arrays. More recently, he worked on the microscopic origin of the equilibrium doping limits in a wide range of semiconductors. The work explains the astonishing lineup of the maximum Fermi energies in various III-V compounds. The work on light-induced hydrogen motion in a-Si is an important step toward the understanding of the Stabler-Wronski Effect. It suggests a novel dynamic Jahn-Teller pathway for nonradiative decay of photocarriers. He also works on low-temperature (thus nonequilibrium) growth/doping processes of wide-gap semiconductors. The work on ZnO proposes a new molecular, as opposed to atomic, doping approach as an effective means to significantly enhance the dopant solubility for p-type ZnO at low temperature. Dr. Zhang’s current research interests cover a variety of physical properties of bulk, surfaces, and defects in a wide range of materials including Group IV, III-V, II-VI, I-VII compounds, alloys, and oxides. Shengbai Zhang can be reached at: Rensselaer Polytechnic Institute, Troy, NY (518)276-6127 e-mail: zhangs@rpi.edu. |
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