至尊木虫 (知名作家)
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RXMCDM: 金币+1, 多谢应助！ 2014-09-14 10:56:21
hongyangb: 金币+20, 翻译EPI+1, ★★★很有帮助, 非常感谢 2014-09-14 12:43:12
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Abstract: Bismuth ferrite is the only material found so far with the multiferroic properties at room temperature. It has several excellent features, including a smaller band gap, large remnant polarization and high Curie temperature. Therefore, bismuth ferrite has broad application prospects in optoelectronic devices, self-spinning electronic devices, ferroelectric random access memories, magnetic storage units, and other areas. However, its practical application has been limited largely because of the presence of a large leakage current and weak magnetic coupling issues of bismuth ferrite films. Most of the domestic and international scholars use the optimized preparation process of bismuth ferrite thin films, ion doping and other methods to improve its structure and performance. Among them, the ion doping is easy to operate, easy to implement micro-structure, and easy to control its performance, and therefore attracted widespread attention. This paper reviews the domestic and international publications in recent years related to electrical properties of doped bismuth ferrite thin films. It is described in great details in different types of doping, including the A-site (trivalent lanthanide and divalent alkali metal elements), B site (transition metals, etc.) and A-B sites co-doped. The elements in A-site and B-site doping are clarified based on the effects of doping on the leakage current of bismuth ferrite films and residual polarization intensity. The effects and mechanisms of various types of elements doping are summarized systemically. Finally, the problems are presented related to the bismuth ferrite films need to be resolved urgently. |
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