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石墨烯电子结构,能带结构(The electronic properties of graphene) ,graphene 的综述
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This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon,with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge surface states in graphene depend on the edge termination zigzag or armchair and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented. CONTENTS I. Introduction 110 II. Elementary Electronic Properties of Graphene 112 A. Single layer: Tight-binding approach 112 1. Cyclotron mass 113 2. Density of states 114 B. Dirac fermions 114 1. Chiral tunneling and Klein paradox 115 2. Confinement and Zitterbewegung 117 C. Bilayer graphene: Tight-binding approach 118 D. Epitaxial graphene 119 E. Graphene stacks 120 1. Electronic structure of bulk graphite 121 F. Surface states in graphene 122 G. Surface states in graphene stacks 124 H. The spectrum of graphene nanoribbons 124 1. Zigzag nanoribbons 125 2. Armchair nanoribbons 126 I. Dirac fermions in a magnetic field 126 J. The anomalous integer quantum Hall effect 128 K. Tight-binding model in a magnetic field 128 L. Landau levels in graphene stacks 130 M. Diamagnetism 130 N. Spin-orbit coupling 131 III. Flexural Phonons, Elasticity, and Crumpling 132 IV. Disorder in Graphene 134 A. Ripples 135 B. Topological lattice defects 136 C. Impurity states 137 D. Localized states near edges, cracks, and voids 137 E. Self-doping 138 F. Vector potential and gauge field disorder 139 1. Gauge field induced by curvature 140 2. Elastic strain 140 3. Random gauge fields 141 G. Coupling to magnetic impurities 141 H. Weak and strong localization 142 I. Transport near the Dirac point 143 J. Boltzmann equation description of dc transport in doped graphene 144 K. Magnetotransport and universal conductivity 145 1. The full self-consistent Born approximation FSBA 146 V. Many-Body Effects 148 A. Electron-phonon interactions 148 B. Electron-electron interactions 150 1. Screening in graphene stacks 152 C. Short-range interactions 152 1. Bilayer graphene: Exchange 153 2. Bilayer graphene: Short-range interactions 154 D. Interactions in high magnetic fields 154 VI. Conclusions 154 Acknowledgments 155 References 155 |
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2014-03-20 20:47:26, 1.88 M
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2014-03-20 22:51
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