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1. Mostly used device configuration of SLG/Mo/CZTS/CdS/Al:ZnO/Al/Nifor CZTS thin film based solar cell to study the photovoltaic performance is shown in Fig. 3. 2. In 1988, Ito and Nakazawa for the first time reported CZTS thin film deposition based on argon beam sputtering from pressed and sintered targets of quaternary compound produced from synthesised powders. 3. Without post-deposition sulphurisation treatment and even for very low substrate temperature of 90uC during deposition, crystalline CZTS with stannite type was reported. |
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真强必胜: 金币+2, 好 2014-03-29 20:17:30
真强必胜: 金币+2, 好 2014-03-29 20:17:30
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1. Mostly used device configuration of for CZTS thin film based solar cell to study the photovoltaic performance is shown in Fig. 3. 为研究光伏性能，SLG/Mo/CZTS/CdS/Al:ZnO/Al/Ni 用于CZTS薄膜太阳能电池的主要设备配置如图3所示 。 2. In 1988, Ito and Nakazawa for the first time reported CZTS thin film deposition based on argon beam sputtering from pressed and sintered targets of quaternary compound produced from synthesised powders. 在1988年， Ito 和 Nakazawa 首次报道 基于压制氩气束溅射的CZTS薄膜沉积法和从合成粉体产生的季铵盐化合物的烧结指标。 3. Without post-deposition sulphurisation treatment and even for very low substrate temperature of 90uC during deposition, crystalline CZTS with stannite type was reported. 无沉积后硫化处理，甚至对沉积过程中非常低的90uC的衬底温度，锡矿样CZTS结晶已有报道。 |
2楼2014-03-17 23:00:33
