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烽?W戀

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[求助] 求一些制备多孔SiC的文章,受实验室条件限制温度不要太高 已有1人参与

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iSCIpapers

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大叔还年轻

【答案】应助回帖

感谢参与,应助指数 +1
合成SiC通常需要>1000C

Krawiec, P., Geiger, D., & Kaskel, S. (2006). Ordered mesoporous silicon carbide (OM-SiC) via polymer precursor nanocasting. Chemical communications, (23), 2469-2470.
2楼2014-03-10 01:21:02
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iSCIpapers

木虫 (正式写手)

大叔还年轻

【答案】应助回帖

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烽?W戀: 金币+30, ★★★很有帮助 2014-03-10 16:17:24
这个只要600C
该文的一作好像在海归某高校了

Shi, Y., Zhang, F., Hu, Y. S., Sun, X., Zhang, Y., Lee, H. I., ... & Stucky, G. D. (2010). Low-temperature pseudomorphic transformation of ordered hierarchical macro-mesoporous SiO2/C nanocomposite to SiC via magnesiothermic reduction. Journal of the American Chemical Society, 132(16), 5552-5553.

A magnesiothermic reduction synthesis approach is reported for direct conversion of SiO2/C composite nanostructures to corresponding SiC materials without losing their nanostructure morphologies. Crystalline SiC materials can be obtained by this approach at a temperature as low as 600 °C, only approximately half of that applied in the generally used carbothermal reduction and preceramic polymer pyrolysis methods. An ordered hierarchical macro-mesoporous SiC material was synthesized for the first time as a demonstration. This pseudomorphic transformation can be regarded as a general synthesis method for different kinds of SiC nanostructures, and it can also be readily extended to other metal carbide materials as well as TiC.
3楼2014-03-10 01:24:29
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