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×î½ü¿´ÎÄÏ×£¬ÊÇ ¹ØÓÚBiOI-C3N4ÒìÖʽá´ß»¯¼ÁµÄ£¬ÓÐÕâôһ¶Î»°£¬ÔÎÄÈçÏ£º When p-type BiOI and n-type p-g-C3N4 are in contact, since the CB potential of p-g-C3N4 is more negative than that of BiOI, the electrons will diffusion from p-g-C3N4 to BiOI, resulting in accumulation of negative charges in BiOI close to the junction. At the same time, the holes transfer from BiOI top-g-C3N4, leaving a positive section in p-g-C3N4 near the junction. With equilibration of BiOI and p-g-C3N4 Fermi levels, the diffusion of electrons from p-g-C3N4 to BiOI stops. Meanwhile, the energy bands of BiOI shift upward along the Fermi level (EFp) and those of the p-g-C3N4 shift downward along its Fermi level (EFn), as shown in Fig. 9b. As a result, the CB bottom of BiOI became higher than that of p-g-C3N4. Under visible-light irradiation, both BiOI and p-g-C3N4 absorb photons of energy greater than the corresponding band gap energy, which excite the electrons in the VB to the CB and leave holes in the VB. The electrons in the conduction band of the p-BiOI are then transferred to the n-type p-g-C3N4, and the holes remain in the valence band of BiOI. The migration of photogenerated carriers can be promoted by the inner electric field established at the heterojunction interfaces. ÎÒÀí½â´ó¸ÅÊÇÕâ¸öÒâ˼£ºC3N4µÄµ¼´ø±ÈBiOIµÄµ¼´ø¸ü¸º£¬µç×Ó´ÓC3N4´«µÝµ½BiOI£¬¼Û´øBiOI±ÈC3N4¸üÕý£¬ËùÒÔ¿ÕѨ´ÓBiOI´«ÏòC3N4£¬µ±´ïµ½Ä³ÖÖÆ½ºâºó£¬¼Û´øºÍµ¼´øÎ»ÖûᷢÉú±ä»¯£¬Ê¹Çé¿öÕýºÃÏà·´£¬µç×Ó´ÓBiOI´«µÝµ½C3N4£¬¿ÕѨ´ÓC3N4´«ÏòBiOI¡£ÕâÊÇÎªÊ²Ã´ÄØ£¿ÓÐûÓдóÅ£ÄܸøÏµÍ³ÓÖ¼òÃ÷Ö±°×µÄ½âÊÍһϣ¬Ð»Ð»£¡ |
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hushaozheng
½ð³æ (СÓÐÃûÆø)
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- ×¢²á: 2011-01-14
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3Â¥2014-03-04 19:05:30
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2Â¥2014-03-04 17:43:39
hushaozheng
½ð³æ (СÓÐÃûÆø)
- Ó¦Öú: 7 (Ó×¶ùÔ°)
- ½ð±Ò: 33
- É¢½ð: 306
- ºì»¨: 3
- Ìû×Ó: 278
- ÔÚÏß: 199.9Сʱ
- ³æºÅ: 1189747
- ×¢²á: 2011-01-14
- ÐÔ±ð: GG
- רҵ: ´ß»¯»¯Ñ§
4Â¥2014-03-04 19:05:58
ɳÖÐľ
½ð³æ (ÕýʽдÊÖ)
- Ó¦Öú: 7 (Ó×¶ùÔ°)
- ½ð±Ò: 1355
- É¢½ð: 229
- ºì»¨: 2
- Ìû×Ó: 380
- ÔÚÏß: 319.7Сʱ
- ³æºÅ: 1511005
- ×¢²á: 2011-11-26
- ÐÔ±ð: GG
- רҵ: ¸ß·Ö×Ӻϳɻ¯Ñ§

5Â¥2014-03-05 13:11:34













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