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lmcr

铜虫 (小有名气)

[求助] BiFeO3 薄膜的磁电系数是多大? 已有1人参与

请问到目前为止,BiFeO3或者doped BFO 的磁电系数有多大?
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huichangniu

木虫 (正式写手)

【答案】应助回帖

mjx150: 回帖很有用 2014-02-24 09:40:08
0.52 (ps/m)   linear ME coefficient: lower limit, measured under 18 K
文献 Rivera J P, Schmid H. On the birefringence of magnetoelectric BiFeO3[J]. Ferroelectrics, 1997, 204: 23-33.
3楼2014-02-23 20:27:43
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wangxx69

铁虫 (初入文坛)

【答案】应助回帖

感谢参与,应助指数 +1
mjx150: 感谢交流 2014-02-24 09:39:54
In-plane dielectric and magnetoelectric studies of BiFeO3[Advanced Materials Physics]
Ashok Kumar, J. F. Scott, R. Martínez, G. Srinivasan, and R. S. Katiyar

The in-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films shows diffuse but prominent phase transitions near 450 (±10) K and 550 K with dielectric-loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the “transition” first reported by Polomska et al. [Phys. Status Solidi 23, 567 (1974)]. The 550 K anomalies coincide with the surface phase transition recently reported by Xavi et al. [Phys. Rev. Lett. 106, 236101 (2011)]. In addition, anomalies are found at low temperatures: After several experimental cycles the dielectric loss shows a clear relaxor-like phase transition near what was previously suggested to be a spin reorientation transition (SRT) temperature (~201 K) for frequencies 1 kHz < f < 1 MHz which follow a nonlinear Vogel–Fulcher (V–F) relation; an additional sharp anomaly is observed near ~180 K at frequencies below 1 kHz. As emphasized recently by Cowley et al. [Adv. Phys. 60, 229 (2011)], skin effects are expected for all relaxor ferroelectrics. Using planar interdigital electrodes, Kumar et al. present experimental data and a theoretical model for the in-plane longitudinal and transverse direct magnetoelectric (ME) coefficients. Reasonably good ME coefficients (~300 mV/Oe cm in transverse and 2 V/Oe cm in longitudinal direction) are measured. Understanding of the in-plane phase transitions and ME behaviour may be helpful to design nanoscale and interfacial devices with high surface to volume ratios.

Phys. Status Solidi A (2012) DOI 10.1002/pssa.201228154
菠萝文尼亚
2楼2013-11-24 10:34:07
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