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Nature Nanotechnology、Nature Materials: 单层二硫化钼制备方法及相关研究 已有3人参与
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包括最经典的两篇nature，主要介绍单层二硫化钼相关研究1.Ultrasensitive photodetectors based on monolayer MoS2 Oriol Lopez-Sanchez1, Dominik Lembke1, Metin Kayci2, Aleksandra Radenovic2* and Andras Kis1* Two-dimensional materials are an emerging class of new materials with a wide range of electrical properties and potential practical applications. Although graphene1 is the most well- studied two-dimensional material, single layers of other materials, such as insulating BN (ref. 2) and semiconducting MoS2 (refs 3,4) or WSe2 (refs 5,6), are gaining increasing atten- tion as promising gate insulators and channel materials for field- effect transistors. Because monolayer MoS2 is a direct-bandgap semiconductor7,8 due to quantum-mechanical confinement7,9,10, it could be suitable for applications in optoelectronic devices where the direct bandgap would allow a high absorption coeffi- cient and efficient electron–hole pair generation under photo- excitation. Here, we demonstrate ultrasensitive monolayer MoS2 phototransistors with improved device mobility and ON current. Our devices show a maximum external photoresponsiv- ity of 880 A W21 at a wavelength of 561 nm and a photoresponse in the 400–680 nm range. With recent developments in large-scale production techniques such as liquid-scale exfoliation11–13 and chemical vapour deposition-like growth14,15, MoS2 shows important potential for applications in MoS2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy. 2.Mobility engineering and a metal–insulator transition in monolayer MoS2 Branimir Radisavljevic and Andras Kis* Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising channel materials for field-effect transistors (FETs). The presence of a direct bandgap in monolayer MoS2 due to quantum mechanical confinement allows room-temperature FETs with an on/off ratio exceeding 108. The presence of high-κ dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS2 FETs in different dielectric configurations. The dependence of mobility on temperature shows clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectric. At the same time, phonon scattering shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal–insulator transition in monolayer MoS2 due to strong electron–electron interactions. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS2 as an interesting system for studying ects in mesoscopic systems.ects in mesoscopic systems. 另外还有ACS Nano 上的两篇 1. Single-Layer MoS2 Phototransistors Zongyou Yin,†,§ Hai Li,†,§ Hong Li,‡ Lin Jiang,† Yumeng Shi,† Yinghui Sun,† Gang Lu,† Qing Zhang,‡ Xiaodong Chen,† and Hua Zhang†,* 2. Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals Hongyan Shi,†,‡ Rusen Yan,§ Simone Bertolazzi,^ Jacopo Brivio,^ Bo Gao,‡ Andras Kis,^ Debdeep Jena,§ Huili Grace Xing,§ and Libai Huang†,*  Ultrasensitive photodetectors based on monolayer MoS2.png  Mobility engineering and a metal–insulator transition in monolayer MoS2.png [ Last edited by qiongmo on 2013-11-6 at 16:04 ] |
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