| ²é¿´: 304 | »Ø¸´: 1 | ||
| ±¾Ìû²úÉú 1 ¸ö ²©Ñ§EPI £¬µã»÷ÕâÀï½øÐв鿴 | ||
hj112358Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
|
[ÇóÖú]
ÇëÎÊÓÐûÓÐÄÄλ¿´µ½¹ØÓÚÓ¦Á¦×÷ÓÃÏÂÇâ¡¢º¤µÈÀ©É¢Ñо¿µÄÂÛÎİ¡£¿Ð»Ð»
|
|
| ÇëÎÊÓÐûÓÐÄÄλ¿´µ½¹ØÓÚÓ¦Á¦×÷ÓÃÏÂÇâ¡¢º¤µÈÀ©É¢Ñо¿µÄÂÛÎİ¡£¿Ð»Ð» |
» ²ÂÄãϲ»¶
291 Çóµ÷¼Á
ÒѾÓÐ5È˻ظ´
298-Ò»Ö¾Ô¸Öйúũҵ´óѧ-Çóµ÷¼Á
ÒѾÓÐ11È˻ظ´
Ò»Ö¾Ô¸ÄϾ©Àí¹¤´óѧ085701×ÊÔ´Óë»·¾³302·ÖÇóµ÷¼Á
ÒѾÓÐ7È˻ظ´
316Çóµ÷¼Á
ÒѾÓÐ7È˻ظ´
²ÄÁÏÓ뻯¹¤¿¼Ñе÷¼Á
ÒѾÓÐ4È˻ظ´
Ò»Ö¾Ô¸ÖØÇì´óѧ085700×ÊÔ´Óë»·¾³£¬×Ü·Ö308Çóµ÷¼Á
ÒѾÓÐ7È˻ظ´
Ò»Ö¾Ô¸211 ³õÊÔ270·Ö Çóµ÷¼Á
ÒѾÓÐ4È˻ظ´
08¹¤Ñ§µ÷¼Á
ÒѾÓÐ11È˻ظ´
350Çóµ÷¼Á
ÒѾÓÐ6È˻ظ´
Çóµ÷¼ÁÒ»Ö¾Ô¸Î人Àí¹¤´óѧ²ÄÁϹ¤³Ì£¨085601£©
ÒѾÓÐ4È˻ظ´
154696523
½ð³æ (ÖøÃûдÊÖ)
ÕýÄÜÁ¿Ê¹Õß
- ²©Ñ§EPI: 332
- Ó¦Öú: 26 (СѧÉú)
- ½ð±Ò: 4590
- É¢½ð: 6595
- ºì»¨: 45
- ɳ·¢: 19
- Ìû×Ó: 2544
- ÔÚÏß: 529.1Сʱ
- ³æºÅ: 1509142
- ×¢²á: 2011-11-25
- ÐÔ±ð: GG
- רҵ: Äý¾Û̬ÎïÐÔ II £ºµç×ӽṹ
- ¹ÜϽ: Óн±ÎÊ´ð
¡¾´ð°¸¡¿Ó¦Öú»ØÌû
¡ï ¡ï ¡ï
hj112358: ½ð±Ò+3, ²©Ñ§EPI+1, ¡ï¡ï¡ïºÜÓаïÖú, лл°¡£¡ÎÒÏ뿴һϽðÊôÖÐµÄ 2013-05-31 22:45:28
hj112358: ½ð±Ò+3, ²©Ñ§EPI+1, ¡ï¡ï¡ïºÜÓаïÖú, лл°¡£¡ÎÒÏ뿴һϽðÊôÖÐµÄ 2013-05-31 22:45:28
|
ÕâÆªÔõôÑù£¿ Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen A Misiuka, Corresponding author contact information, E-mail the corresponding author, J Bak-Misiukb, I.V Antonovac, V Rainerid, A Romano-Rodrigueze, A Bachrourie, H.B Surmaf, J Ratajczaka, J Katckia, J Adamczewskab, E.P Neustroevc Computational Materials Science Volume 21, Issue 4, August 2001, Pages 515¨C525 2001 - Elsevier |

2Â¥2013-05-31 17:35:38













»Ø¸´´ËÂ¥