| 查看: 389 | 回复: 9 | ||
| 【奖励】 本帖被评价8次，作者universemaster增加金币 6.5 个 | ||
| 当前主题已经存档。 | ||
[资源]
VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
|
||
|
VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition Sorab K. Ghandhi 超大规模集成电路制造技术，同志们，超好的一本当代用书！ Summary: Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. Table of Contents: Material Properties. Phase Diagrams and Solid Solubility. Crystal Growth and Doping. Diffusion. Epitaxy. Ion Implantation. Native Films. Deposited Films. Etching and Cleaning. Lithographic Processes. Device and Circuit Fabrication. Appendix. Index. http://mihd.net/5rnpky 觉得有用、有价值者，不妨帮忙五星级鼓励一下，请不要下完转身就走！ |
回复此楼
2楼2007-10-07 17:50:23
3楼2007-12-06 17:42:47