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[求助]
编辑说英语比较差，英文求润色啊！！谢谢阿
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H. Funaki et al. prepared Ni80Fe20 films with the thickness of 20 nm, which exhibited a high MR of 3.5% after an appropriate post-annealing treatment. The improvement is due to the decrease of zero-field resistivity resulting from remarkable grain growth in the films. Taking into account diffusive electron scattering at the film surface, the MR value is thought to be very close to that of the bulk. In 2003, the Ni83Fe17 films prepared by Wu et al. at the substrate temperature above 350℃ and then annealed at 650℃ for 1 h exhibit good MR properties. The decrease in resistivity and the increase in AMR ratio are caused by the decrease in point defects, the increase in grain size, and the improvement in grain lattice integrity of the films. Most recently, Wang et al. prepared a series of Ni81Fe19 films by magnetron sputtering method in a lower test condition and won an excellent test result. The Ni81Fe19 films prepared at the substrate temperatures of 400 ℃ showed a higher AMR value and a lower saturation magnetic field. |
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hookhans
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Carena: 金币+2, 感谢应助，辛苦 2013-04-28 17:05:02
柠檬树: 金币+15, 翻译EPI+1, ★★★★★最佳答案, 果酱啦 哈 2013-04-28 22:29:05
Carena: 金币+2, 感谢应助，辛苦 2013-04-28 17:05:02
柠檬树: 金币+15, 翻译EPI+1, ★★★★★最佳答案, 果酱啦 哈 2013-04-28 22:29:05
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谨供参考,注意严谨------你写的已经够可以的了. H. Funaki et al. prepared Ni80Fe20 films with the thickness of 20 nm, which exhibited an improved MR of 3.5% after appropriate post-annealing treatment. The improvement is due to the decrease of the zero-field resistivity resulting from remarkable grain growth in the films. Taking into account the diffusive electron scattering at the film surface, the MR value of the film(那个和那个的MRvalue 比较要说清) is thought to be very close to that of the bulk. In 2003, the Ni83Fe17 films prepared by Wu et al. at the substrate temperature above 350℃ and post-annealing temperature of 650℃exhibited good MR properties. It was demonstrated that the decrease in resistivity and the increase in AMR ratio were due to the decrease in point defects, the increase in grain size, and the improvement of the grain lattice integrity in the films. Most recently, Wang et al. prepared a series of Ni81Fe19 films by magnetron sputtering method in a lower test condition and obtained an excellent test result. They showed that the Ni81Fe19 films prepared at the substrate temperatures of 400 ℃ exhibited a higher AMR value and a lower saturation magnetic field. |
2楼2013-04-28 16:25:13
