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柠檬树(phu_grassman代发): 金币+15, 翻译EPI+1, Good Job 2013-06-29 12:25:40

1.Mitchnell et al. 道了NiFe的磁电阻值和NiFe薄膜的成分和厚度有关，并且给出了块体和薄膜状态下NiFe的MR值随成分的变化曲线。

Mitchnell et al. reported that the magnetoelectric resistance (MR) of NiFe are related to the composition and thickness of NiFe, and proposed the change of MR according to composition of NiFe block and film, respectively.

2.对于NiFe薄膜来说，Lee et al. 认为在厚度一定时，单一的强（111）织构一般都对应较大的MR值，而随机取向的薄膜的MR值一般不大。Lee et al. and Sheng et al.等人利用合适的种子层如：Ta和NiFeCr等诱导出很强的NiFe（111）织构，获得了显著提高的磁电阻值。

As far as NiFe film be concerned, Lee et al. held that the strong peak according to (111) facet texture generally corresponds to larger values of MR, while the low value of MR generally accords to the random orientation. Lee et al. and Sheng et al. obtained NiFe with strong (111) facet texture and remarkablely elevated MR value, through suitable seed layer as the induction, such as: Ta and NiFeCr.

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