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【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ 爱与雨下: 金币+2 2013-04-24 21:01:55 qccan: 金币+25, 翻译EPI+1, ★★★很有帮助, 非常感谢,这应助俺就收下了。。。金币答谢了 2013-04-24 23:31:42
提前说明,本人也不是高手,一起学习,个别专业词汇,还需楼主斟酌。当然我也有不会的。
Graphene is made of a single layer of carbon atoms that are
densely packed into a honeycomb lattice.
石墨烯是由密集成蜂窝状晶格的碳原子的单层结构构成。
It is an attractive material with outstanding electrical, mechanical and chemical
properties that can be used as transparent electrodes for
various applications in flexible electronics [10–17].
由于其良好的电气性质、机械性质和化学性质,石墨烯作为透明电极广泛应用于柔性电子产业。
Since the discovery of the first isolated graphene obtained by mechanical exfoliation of bulk graphite [10], many chemical approaches for obtaining large-scale graphene have been developed, including epitaxial growth of graphene on silicon carbide [18, 19] and ruthenium [20] as well as the approach to produce (reduced graphene oxide, RGO) sheets by a simple solution dispersion process [21–24].
自从对块状石墨进行机械剥离时第一次发现分离的石墨烯,人们开始开发许多制取石墨烯的方法,包括石墨烯在碳化硅和钌的表面的外延生长,以及利用简单的溶液分散过程来制取(还原氧化石墨烯)。
Table 1 summarizes four representative methods for obtaining graphene films.
表1.总结了四种典型的制取石墨烯薄膜的方法
The graphene obtained from the mechanical exfoliation method shows excellent
properties but it is impossible to utilize it for large-scale practical applications.
机械剥离法制得的石墨烯具有良好的性质,但是无法用于大规模的实际应用。
Epitaxial growth allows us to produce high-quality multilayer graphene samples.
外延生长法可以制取优质的多层石墨烯。
However, SiC substrates are relatively expensive, and the scale of synthesis is limited by the size of SiC wafers.
但是 碳化硅基底相对昂贵,并且生产规模受碳化硅膜片大小的限制。
In addition, it is difficult to transfer graphene from SiC to an arbitrary substrate, which is essential for the use of graphene for transparent electrodes.
另外,石墨烯应用于透明电极时,很难将其从碳化硅的表面转移到其他的基底上。
The self-assembly of dispersed graphene sheets in solution demonstrates the possibility of low-cost synthesis and the fabrication of large-scale graphene films.
溶液中分散石墨烯薄片的自组装一种低成本的合成以及可以生产大型石墨烯薄膜。
However, the assembled graphene films have relatively poor electrical conductivity owing to the high interlayer junction contact resistance and the structural defects formed during the oxidation and reduction processes.
然而,由于高隔层结接触电阻和在氧化还原反应过程中造成的结构缺陷,自组装石墨烯薄膜的导电性相对较差。
Thus, we can conclude that synthesis by chemical vapor deposition (CVD) methods is expected to be the most suitable for large-scale and high-quality graphene film production to be used as transparent electrodes.
因此,化学气相沉积(CVD)应该是最适合生产用于透明电极的大型优质石墨烯薄膜的方法。
The CVD-grown graphene films can be successfully transferred onto arbitrary substrates with various methods as shown in figure 2 [25–29].
化学气相沉积法制得的石墨烯薄膜可以转移到任意的基底上,方法如图2所示。
Lee et al [29] recently reported a wafer-scale synthesis and transfer method that utilizes poly-di-methyl-siloxane (PDMS) or thermal-release tape as polymer supports to transfer graphene from on-metal layers to target substrates.
最近Lee的科研小组报导了一种圆片规模合成和转移方法,他们用聚甲基硅氧烷(PDMS)和热释放磁带作为高聚物载体将石墨烯从技术表面转移到目标基底上。
The CVD-grown graphene can also be transferred by using spin-coated poly-methyl-methacrylate (PMMA) polymer films [26–28].
化学气相沉积制得的石墨烯也可以用旋涂聚甲基丙烯酸甲酯(PMMA)聚合物薄膜的方法转移。
Li et al [28] found that the graphene transfer yield can be improved by introducing a second PMMA coating on top of the first PMMA/grapheme layer because of the enhanced mechanical strength.
Li的科研小组发现在第一层聚甲基丙烯酸甲酯(PMMA)薄膜上再涂一层聚甲基丙烯酸甲酯(PMMA),由于增强了机械强度,进而改善了石墨烯转移的量。
However, the scale is also limited below the size of wafers because the PMMA layer has to be spin-coated on flat and rigid substrates.
然而,由于PMMA层必须旋涂在平面刚性基底上,石墨烯转移的规模也受膜片大小的限制。
In order to overcome the limitation of previous methods, Bae et al [30] developed a roll-to-roll transfer method utilizing thermal release tapes as shown in figure 3.
为了突破以上方法的限制,Bae等人利用热释放磁带发明了一种卷式转移方法,如图3所示。
The roll-to-roll method is easy to scale-up and also allows simple layer-by-layer (LBL) multiple transfers combined with the doping of individual layers that can enhance the sheet resistance of graphene.
卷式法易于扩大规模并且也可以逐层结合掺杂单层的多个转移,这样加强了石墨烯的薄层电阻。 |
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