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ZnO及纳米ZnO的综述汇总
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Zinc oxide nanostructures: growth, properties and applications Zhong Lin Wang School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA E-mail: zhong.wang@mse.gatech.edu Received 8 April 2004 Published 11 June 2004 Online at stacks.iop.org/JPhysCM/16/R829 doi:10.1088/0953-8984/16/25/R01 Abstract Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Using a solid–vapour phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobelts, nanowires and nanocages of ZnO have been synthesized under specific growth conditions. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by the solid–vapour phase technique and their corresponding growth mechanisms. The application of ZnO nanobelts as nanosensors, nanocantilevers, field effect transistors and nanoresonators is demonstrated. (Some figures in this article are in colour only in the electronic version) Contents 1. Introduction 830 2. Crystal and surface structure of ZnO 831 3. Typical growth structures of ZnO 831 4. Synthesis techniques 832 5. Nanostructures and the growth processes 833 5.1. Nanorods 833 5.2. Nanobelts 835 5.3. Ultranarrow nanobelts 836 5.4. Hierarchical nanostructures 836 5.5. Nanocombs and nanosaws 838 5.6. Nanosprings and nanospirals 839 5.7. Seamless nanorings 839 6. Kinetics in nanostructure formation 841 6.1. Core–shell nanobelts and nanotubes 841 6.2. Nanocages 845 7. Doped ZnO nanobelts 846 8. Properties, potential applications and novel devices 847 8.1. Luminescent property 847 8.2. Field effect transistor 848 8.3. Tunable electrical properties 849 8.4. Photoconductivity 850 8.5. Gas, chemical and biosensors 850 8.6. Thermal conductivity 852 8.7. Nanobelts as nanoresonators 852 8.8. Nanocantilevers 854 8.9. Piezoelectricity of the polar nanobelts 855 9. Outlook 856 Acknowledgments 857 References 857 http://www.nanoscience.gatech.edu/zlwang/paper/2004/04_JP_1.pdf ZnO nanowire growth and devices Y.W. Heoa,*, D.P. Nortona, L.C. Tiena, Y. Kwona, B.S. Kangb, F. Renb, S.J. Peartona, J.R. LaRochec aDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA bDepartment of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA cRaytheon, Waltham, MA 02451, USA Accepted 23 September 2004 Available online 25 December 2004 Abstract The large surface area of ZnO nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them candidates for micro-lasers or memory arrays. In addition, they might be doped with transition metal (TM) ions to make spin-polarized light sources. To date, most of the work on ZnO nanostructures has focused on the synthesis methods and there have been only a few reports of the electrical characteristics. We review fabrication methods for obtaining device functionality from single ZnO nanorods. A key aspect is the use of sonication to facilitate transfer of the nanorods from the initial substrate on which they are grown to another substrate for device fabrication. Examples of devices fabricated using this method are briefly described, including metal-oxide semiconductor field effect depletion-mode transistors with good saturation behavior, a threshold voltage of 3 V and a maximum transconductance of order 0.3 mS/mm and Pt Schottky diodes with excellent ideality factors of 1.1 at 25 8C and very low (1.5 1010 A, equivalent to 2.35 A cm2, at 10 V) reverse currents. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. These results show the ability to manipulate the electron transport in nanoscale ZnO devices. http://rapidshare.com/files/32269668/ZnO_nanowire_growth_and_devices.pdf.html ZnO nanorods: synthesis,characterization and applications Gyu-Chul Yi, ChunruiWang and Won Il Park National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea E-mail: gcyi@postech.ac.kr Received 5 October 2004, in final form 21 October 2004 Published 15 March 2005 Online at stacks.iop.org/SST/20/S22 Abstract This paper presents a review of current research activities on ZnO nanorods (or nanowires). We begin this paper with a variety of physical and chemical methods that have been used to synthesize ZnO nanorods (or nanowires). There follows a discussion of techniques for fabricating aligned arrays, heterostructures and doping of ZnO nanorods. At the end of this paper, we discuss a wide range of interesting properties such as luminescence, field emission, gas sensing and electron transport, associated with ZnO nanorods, as well as various intriguing applications. We conclude with personal remarks on the outlook for research on ZnO nanorods. http://rapidshare.com/files/32269666/ZnO_nanorods_synthesis_characterization_and_applications.pdf.html Recent progress in processing and properties of ZnO S.J. Peartona,∗, D.P. Nortona, K. Ipa, Y.W. Heoa, T. Steinerb aDepartment of Materials Science and Engineering, University of Florida, PO Box 116400, Gainesville, FL 32611, USA bAir Force Office of Scientific Research, Arlington, VA 22217, USA Received 10 September 2003; accepted 20 October 2003 Available online 19 December 2003 Abstract ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition metaldoped ZnO. http://rapidshare.com/files/32269662/Recent_progress_in_processing_and_properties_of_ZnO.pdf.html ZnO: growth,doping & processing by D. P. Norton*, Y. W. Heo*, M. P. Ivill*, K. Ip*, S. J. Pearton*‡, M. F. Chisholm†, and T. Steinerwww.nanost.netA review is given here of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices. ZnO can be grown on cheap substrates such as glass at relatively low temperatures and may have advantages over the GaN system in some of these applications. Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in UV light emitters, varistors, transparent high-power electronics, surface acoustic wave devices, piezoelectric transducers, and chemical and gas sensing1-6. ZnO has several potential advantages over GaN for some of these applications, including the commercial availability of bulk single crystals and a larger exciton binding energy (~60 meV compared with ~25 meV for GaN)7,8. The latter property should translate to even brighter light emission than obtained with GaN photonics. http://rapidshare.com/files/32269665/ZnO_growth_doping_and_processing.pdf.html Recent advances in ZnO materials and devices D.C. Look Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA Abstract RWurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Most of these applications require only polycrystalline material; however, recent successes in producing large-area single crystals have opened up the possibility of producing blue and light emitters, and high-temperature, high-power transistors. The main advantages of ZnO as a light emitter are its large exciton binding energy (60 meV), and the existence of well-developed bulk and epitaxial growth processes; for electronic applications, its attractiveness lies in having high breakdown strength and high saturation velocity. Optical UV lasing, at both low and high temperatures, has already been demonstrated, although efficient electrical lasing must await the further development of good, p-type material. ZnO is also much more resistant to radiation damage than are other common semiconductor materials,such as Si, GaAs, CdS, and even GaN; thus, it should be useful for space applications. © 2001 Elsevier Science B.V. All rightsireserved. Keywords: ZnO; UV lasing; Epitaxial growth http://rapidshare.com/files/32269661/Recent_advances_in_ZnO_materials_and_devices.pdf.html The future of ZnO light emitters D. C. Look*, 1, 2, B. Claflin1, 2, Ya. I. Alivov3, and S. J. Park4Air Force Research Laboratory, Materials and Manufacturing Directorate, Dayton, OH, 45433, USA Semiconductor Research Center, Wright State University, Dayton, OH, 45435, USA Institute of Microelectronics Technology, RAS, Chernogolovka, Russia Department of Materials Science and Technology, K-JIST, Kwangju, 500-712, Korea Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters are p–n junctions,Sand p-type ZnO is difficult to make. Thus, the future of ZnO light emitters depends on either producing low-resistivity p-type ZnO, or in mating n-type ZnO with a p-type hole injector. Perhaps the best device so far involves an n-ZnO/p-AlGaN/n-SiC structure, which produces intense 390 ± 1 nm emission at both 300 K and 500 K. However, development of p-ZnO is proceeding at a rapid pace, and a p–n homojunction should be available soon.www.nanost.net6X http://rapidshare.com/files/32269663/The_future_of_ZnO_light_emitters.pdf.html Zinc Oxide Nanostructures: Synthesis and Properties Zhiyong Fan and Jia G. Lu This article provides a comprehensive review of the current research activities that focus on the ZnO nanostructure materials and their physical property characterizations. It begins with the synthetic methods that have been exploited to grow ZnO nanostructures. A range of remarkable characteristics are then presented,organiz ed into sections describing the mechanical,electr ical,optical, magnetic,and chemical sensing properties. These studies constitute the basis for developing versatile applications of ZnO nanostructures. Keywords: Wide Band Gap Semiconductor,Nanostr ucture,UV Emission,Field Effect Transistors, Chemical Sensing,Spintronics。 http://rapidshare.com/files/32269664/Zinc_Oxide_Nanostructures_Synthesis_and_Properties_.pdf.html |
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