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sunliuqian银虫 (小有名气)
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[求助]
汉译英,求润色,在线等..................................
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1.随着研究的深入，人们发现低维纳米尺度的体系中自旋自由度在很多方面优于电荷，充分利用电子的自旋属性，有可能获得功能更强大、操控更方便、处理速度更快的新一代微电子器件。 As research continues, it is found that the spin degrees of freedom in the low-dimensional nano-scale system are superior to charge in many ways. By making full use of the properties of the electron spin, it is possible to obtain new generation of microelectronic devices with more powerful functionality, more convenient manipulation and much faster processing speed. 2.异常AMR是指在钙钛矿型锰氧化物中发现的比传统AMR大几个数量级的各向异性磁电阻效应。其机制是晶格结构由立方到斜方的扭曲破坏了对称性，产生了一个对外场各向异性的磁弹性响应和随之发生的显著的磁输运行为。 Abnormal AMR with several orders of magnitude than the traditional AMR found in the perovskite-type manganese oxides, originates from the broken symmetry, through cubic to orthorhombic distortion in the lattice structure, creating an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior[17]. 3.在理论上，这种由自旋轨道耦合诱导的各向异性磁电阻现象在高温下实现的可能性并没有明显的物理限制。 In theory, the possibility the AMR phenomenon induced by the spin-orbit coupling achieve on high temperature is no limit. 谢谢 4.他们设计了一种隧穿元件，其只有一个包含IrMn反铁磁体的磁性电极和一个被MgO势垒层分开的无磁性的Pt电极。 The designed tunneling element by Park et al.[18] includes only one IrMn antiferromagnetic magnetic electrode and a Pt electrode, separated by a non-magnetic MgO barrier layer. [ Last edited by sunliuqian on 2013-3-19 at 09:23 ] |
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hookhans
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sunliuqian: 金币+20, 翻译EPI+1, ★★★★★最佳答案, 过奖了 哈哈 经常来求助, 也会收获很多的 你的翻译总能给人惊喜,,,3q 2013-03-19 14:49:46
sunliuqian: 金币+20, 翻译EPI+1, ★★★★★最佳答案, 过奖了 哈哈 经常来求助, 也会收获很多的 你的翻译总能给人惊喜,,,3q 2013-03-19 14:49:46
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其实,LZ的翻译已经够好的了,只是要更精益求精罢了. 以下是的我的语言,谨供参考: 1.随着研究的深入，人们发现 低维纳米尺度的体系中 自旋自由度 在很多方面优于电荷，充分利用电子的自旋属性，有可能获得功能更强大、操控更方便、处理速度更快的新一代微电子器件。 With the development of research, it is found that the spin degrees of freedom in low-dimensional nano-scale systems are superior to the charge in many ways. By taking advantage of the spin properties of electron, it is possible to obtain new generation microelectronic devices with more powerful functionality, more convenient manipulation and much faster processing speed. 2.异常AMR是 指在钙钛矿型锰氧化物中发现的 比传统AMR大几个数量级的 各向异性磁电阻效应。其机制 是晶格结构由立方到斜方的扭曲破坏了对称性，产生了一个对外场 各向异性的磁弹性响应 和 随之发生的显著的磁输运行为。 Abnormal AMR refers to the anisotropic magnetoresistance effect found in perovskite-type manganese oxides, which is several orders of magnitude higher than that of the traditional AMR. The abnormal AMR originates from the broken symmetry caused by the distortion of the crystal (lattice) structure from cubic to orthorhombic, which in turn creates (exerts) an anisotropic magneto-elastic response to the external field and the consequent remarkable magneto-transport behavior[17]. 3.在理论上，这种由自旋轨道耦合诱导 的各向异性磁电阻现象 在高温下实现的可能性并没有明显的物理限制。 In theory, there is no apparent physical limitation on the possibility of realizing the AMR effect induced by the spin-orbit coupling at high temperature. 4.他们设计了一种隧穿元件，其只有一个包含IrMn反铁磁体的磁性电极和一个被MgO势垒层分开的无磁性的Pt电极。 The tunneling element designed by Park et al.[18] contains only one IrMn antiferromagnetic magnetic electrode and a Pt electrode separated by a non-magnetic MgO barrier layer. |
4楼2013-03-19 13:21:46
sunliuqian
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2楼2013-03-19 10:39:02
BoaHancock
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As research continues, it is found that the spin degrees of freedom in the low-dimensional nano-scale system is superior to change in many ways. By making full use of the properties of the electron spin, it is possible to obtain a new generation of microelectronic devices with more robust functionality, more convenient manipulation and much faster processing speed. Abnormal AMR with several orders of magnitude than the traditional AMR found in the perovskite-type manganese oxides, originates from the broken symmetry, through cubic to orthorhombic distortion in the lattice structure, creating an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. In theory, the possibility the AMR phenomenon induced by the spin-orbit coupling achieves at high temperature is not limited. The designed tunneling element by Park et al. includes only one IrMn antiferromagnetic magnetic electrode and a Pt electrode, separated by a non-magnetic MgO barrier layer. |
3楼2013-03-19 11:58:33
