| 查看: 93 | 回复: 1 | |||
| 当前主题已经存档。 | |||
jackchen145荣誉版主 (著名写手)
Kaitokuroba
|
[交流]
推荐-->2007 IEEE device research conference文章
|
||
|
2007 IEEE Device Research Conference: Tour de Dorce Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and their Application. ABSTRACT Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for moleculardiagnostics. [ Last edited by jackchen145 on 2007-9-1 at 16:40 ] |
回复此楼» 猜你喜欢
修改论文，如何借助其他力量？
已经有4人回复
-
中山大学潘越教授课题组2027级推免硕士研究生招生 新增一个专业医学技术名额
已经有21人回复
-
无机化学论文润色/翻译怎么收费?
已经有270人回复
