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推荐-->2007 IEEE device research conference文章
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2007 IEEE Device Research Conference: Tour de Dorce Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and their Application. ABSTRACT Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for moleculardiagnostics. [ Last edited by jackchen145 on 2007-9-1 at 16:40 ] |
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