| 查看: 157 | 回复: 1 | ||
| 【奖励】 本帖被评价1次，作者jackiemwd增加金币 1 个 | ||
| 当前主题已经存档。 | ||
[资源]
[转贴］Pore Characterization in Low-k Dielectric Films Using X-ray Reflectivity
|
||
|
[转贴］Pore Characterization in Low-k Dielectric Films Using X-ray Reflectivity, X-ray Porosimetry (SP 960-13) ［已搜索无重复］ Pore Characterization in Low-k Dielectric Films Using X-ray Reflectivity, X-ray Porosimetry (SP 960-13) By Christopher L. Soles, Hae-Jeong Lee, Eric K. Lin, and Wen-li Wu Publisher: NIST Polymers Division / U.S. Department of Commerce, Technology Administration Donald L. Evans, Secretary Technology Administration Phillip J. Bond, Undersecretary for Technology National Institute of Standards and Technology Arden L. Bement, Jr., Director Number Of Pages: 76 Publication Date: 2004-06 Binding: pdf FOREWORD The persistent miniaturization or rescaling of the integrated chip (IC) has led to interconnect dimensions that continue to decrease in physical size. This, coupled with the drive for reduced IC operating voltages and decreased signal-to-noise ratio in the device circuitry, requires new interlayer dielectric (ILD) materials to construct smaller and more efficient devices. At the current 90 nm technology node, fully dense organosilicate materials provide sufficient ILD shielding within the interconnect junctions. However, for the ensuing 65 nm and 45 nm technology nodes, porous ILD materials are needed to further decrease the dielectric constant k of these critical insulating layers. The challenge to generate sufficient porosity in sub-100 nm features and films is a significant one. Increased levels of porosity are extremely effective at decreasing k, but high levels of porosity deteriorate the mechanical properties of the ILD structures. Mechanically robust ILD materials are needed to withstand the stresses and strains inherent to the chemical–mechanical polishing steps in IC fabrication. To optimize both k and the mechanical integrity of sub-100 nm ILD structures requires exacting control over the pore formation processes. The first step in achieving this goal is to develop highly sensitive metrologies that can accurately quantify the structural attributes of these nanoporous materials. This Recommended Practice Guide is dedicated to developing X-ray Porosimetry (XRP) as such a metrology. It is envisaged that XRP will facilitate the development of nanoporous ILD materials, help optimize processing and fabrication parameters, and serve as a valuable quality control metrology. Looking beyond CMOS technology, many attributes of XRP will be useful for the general characterization of nanoporous materials which are becoming increasingly important in many emerging fields of nanotechnology. http://rapidshare.com/files/52153228/R20070815U.rar |
回复此楼» 猜你喜欢
366求调剂
已经有8人回复
-
0854调剂
已经有7人回复
-
272分材料子求调剂
已经有52人回复
-
一志愿哈工大 085600 277 12材科基求调剂
已经有31人回复
-
290求调剂
已经有16人回复
-
材料工程085601，270求调剂
已经有35人回复
-
085600材料与化工349分求调剂
已经有4人回复
-
22408 352分求调剂
已经有5人回复
-
268分085602化学工程调剂
已经有30人回复
-
211本科材料化工求调剂
已经有18人回复
