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2Â¥2013-03-08 11:52:50
ÄûÃÊÊ÷
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3Â¥2013-03-08 14:15:50
xiao_hu
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phu_grassman: Î¥¹æ´æµµ, please translate by yourself. Thanks 2013-03-14 19:32:07
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When we noticed that 300 degrees of annealing, N, O intensity is much stronger than the preparation of state and 400 annealing state of the strength of the sample. We think the reasons as discussed below. As we mentioned above, XPS peak intensity and collected is related to the number of photoelectron photoelectron photoelectron and quantitative and collected the shot and depth are closely related. When interface after improve, photoelectron is diffuse scattering effect is abate, photoelectron almost can be ejected vertically, within the scope of the 3 lambda probe depth, increase number of photons collected, making XPS peak intensity increases, which can be used to explain the 300 XPS strength enhancement after annealing. And when the interface roughness can cause photoelectron diffuse scattering, when the vertical collection, within the scope of the 3 lambda probe depth, decrease in the number of collected photoelectron, which reduces the XPS peak intensity, which can be used to explain the 400 XPS intensities of after annealing. All in all, 300 after annealing NiFe/AlOx interface is preparation condition improved significantly, and after annealing at 400 degrees, interface and there has been a marked deterioration. ´Õ»î°É |

4Â¥2013-03-08 14:41:08
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5Â¥2013-03-08 15:27:50













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