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[求助]
求助英语达人帮我翻译翻译这段话, 对我来说难度较大, 谢谢诸位!!!!
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我们注意到300度退火时，N，O的强度明显强于制备态和400退火态的样品的强度。我们认为原因as discussed below. As we mentioned above, XPS峰的强度和收集到的光电子数量有关，而收集到光电子数量与光电子的出射深度又密切相关。 当界面改善之后，光电子受到的漫散射作用减弱，光电子近乎可以垂直出射，在3λ的探测深度范围内，使得收集到的光子数量增加，从而使得XPS的峰强度增加，这可以用来解释300退火后XPS强度的增强. 而当界面粗糙的时候，会造成光电子的漫散射，当垂直收集时，在3λ的探测深度范围内，收集到的光电子数量减少，从而降低了XPS的峰强度,这可以用来解释400退火后XPS强度的减弱。总之，300退火后的NiFe/AlOx界面较制备态发生了显著的改善，而在400度退火后，界面又发生了明显的恶化。 跪谢!!!! [ Last edited by 柠檬树 on 2013-3-8 at 11:52 ] |
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2楼2013-03-08 11:52:50
3楼2013-03-08 14:15:50
xiao_hu
木虫 (著名写手)
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【答案】应助回帖
phu_grassman: 违规存档, please translate by yourself. Thanks 2013-03-14 19:32:07
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When we noticed that 300 degrees of annealing, N, O intensity is much stronger than the preparation of state and 400 annealing state of the strength of the sample. We think the reasons as discussed below. As we mentioned above, XPS peak intensity and collected is related to the number of photoelectron photoelectron photoelectron and quantitative and collected the shot and depth are closely related. When interface after improve, photoelectron is diffuse scattering effect is abate, photoelectron almost can be ejected vertically, within the scope of the 3 lambda probe depth, increase number of photons collected, making XPS peak intensity increases, which can be used to explain the 300 XPS strength enhancement after annealing. And when the interface roughness can cause photoelectron diffuse scattering, when the vertical collection, within the scope of the 3 lambda probe depth, decrease in the number of collected photoelectron, which reduces the XPS peak intensity, which can be used to explain the 400 XPS intensities of after annealing. All in all, 300 after annealing NiFe/AlOx interface is preparation condition improved significantly, and after annealing at 400 degrees, interface and there has been a marked deterioration. 凑活吧 |
4楼2013-03-08 14:41:08
5楼2013-03-08 15:27:50
