| ²é¿´: 2315 | »Ø¸´: 14 | ||
| µ±Ç°Ö»ÏÔʾÂú×ãÖ¸¶¨Ìõ¼þµÄ»ØÌû£¬µã»÷ÕâÀï²é¿´±¾»°ÌâµÄËùÓлØÌû | ||
jiaxe2003Ìú³æ (СÓÐÃûÆø)
|
[½»Á÷]
×îÐÂScienceÎÄÕ ̫ÑôÄÜµç³ØÈ¡µÃнøÕ¹ ÒÑÓÐ11È˲ÎÓë
|
|
liuzhiyong44
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
- Ó¦Öú: 6 (Ó×¶ùÔ°)
- ½ð±Ò: 15304.4
- ºì»¨: 24
- Ìû×Ó: 2554
- ÔÚÏß: 337.6Сʱ
- ³æºÅ: 901240
- ×¢²á: 2009-11-12
- ÐÔ±ð: GG
- רҵ: ¹âѧ
11Â¥2013-04-01 20:42:04
zzccyy778
ľ³æ (СÓÐÃûÆø)
- Ó¦Öú: 1 (Ó×¶ùÔ°)
- ½ð±Ò: 4567.9
- É¢½ð: 2475
- ºì»¨: 2
- ɳ·¢: 1
- Ìû×Ó: 188
- ÔÚÏß: 108.4Сʱ
- ³æºÅ: 460316
- ×¢²á: 2007-11-16
- ÐÔ±ð: GG
- רҵ: Äý¾Û̬ÎïÐÔ II £ºµç×ӽṹ
3Â¥2013-03-11 08:48:48
secess
Òø³æ (СÓÐÃûÆø)
- Ó¦Öú: 4 (Ó×¶ùÔ°)
- ½ð±Ò: 1655.2
- É¢½ð: 11
- ºì»¨: 2
- Ìû×Ó: 202
- ÔÚÏß: 35.1Сʱ
- ³æºÅ: 2303858
- ×¢²á: 2013-02-27
- רҵ: ¸ßµçѹÓë¾øÔµ
4Â¥2013-03-11 13:13:48
![]() ![]() |
5Â¥2013-03-11 13:28:03














hotovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.
»Ø¸´´ËÂ¥
zzccyy778
