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Raman imaging of semiconductor materials
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Raman imaging of semiconductor materials: characterization of static and dynamic properties S Nakashima National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan E-mail: nakashima-s@aist.go.jp Received 30 July 2003 Published 22 December 2003 Online at stacks.iop.org/JPhysCM/16/S25 (DOI: 10.1088/0953-8984/16/2/004) Abstract Micro-Raman imaging has been used extensively for characterizing semiconductors. This paper reviews recent developments in the use of Raman microscopy for studying structural and electronic properties of semiconductor crystals and composites. Some results for recent Raman imaging measurements are outlined and discussed. ³æÓÑ×¢Ò⣺¸½¼þ²ÉÓÃrar3.0ѹËõ£¬PDF°æ±¾ÎªAcrobat7.0¡£ **Ò»ÇÐÄÚÈÝÀ´Ô´ÓÚÍøÂçËÑË÷£¬½ûÖ¹Ò»ÇÐÉÌÒµÓ¦Ó㬷ñÔòºó¹ûÓÉÆä³Ðµ££¬±¾Õ¾¼°Ö÷Ìâ×÷Õß²»¸º·¨Âɼ°Á¬´øÔðÈÎ** **Commercial applications of everything Web-searched are prohibited, otherwise we decline all the consequences for law and other responsibility.** [ Last edited by luo.henry on 2008-4-29 at 09:59 ] |
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