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[资源] Nature Nanotechnology: MoS2 二维材料综述

继曼彻斯特获得石墨烯诺奖后，无疑曼彻斯特已经成为全世界石墨烯研发中心，全世界很多优质论文器件都出自曼彻斯特之手，连苏格兰胶带一并成名。正当人们在怀疑世界上是否还有如石墨烯二维材料，瑞士洛桑理工大学年轻教授Andras Kis 给了人们满意的答复，ALD技术在单层MoS2表面制备一层30nm厚的HfO2薄膜作为栅介质，单层MoS2室温流动性至少为200 cm2V-1s-1，与石墨烯纳米棒相当。晶体管的室温电流开/关率达到1×108，超低待机功耗。虽然电子迁移率比石墨烯低，但是石墨烯没有带隙，且开关比低，硫化钼的问世给了半导体领域注入了新的希望。随着intel的制程节点不断缩短，不久它将带着Si technology一起进入坟墓，必须寻找新的半导体材料，人们将焦点注目在二维新材料上，谁主沉浮，让我们拭目以待。

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
nnano_2012_193-f4.jpg

[ Last edited by quanten on 2012-11-27 at 15:41 ]

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附件 1 : Electronicsandoptoelectronicsoftwodimensionaltransitionmetaldichalcogenides.pdf

2012-11-25 22:19:29, 1.95 M