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×î½üÄϾ©´óѧ¹ÌÌå΢½á¹¹ÎïÀí¹ú¼ÒÖØµãʵÑéÊÒÔÚ¹ú¼Ê¶¥¼¶Ñ§Êõ¿¯ÎïPhysical Review Letters £¨PRL£¬Ó°ÏìÒò×Ó´óÓÚ7£©ºÍ Advanced Materials£¨AM£¬Ó°ÏìÒò ×Ó´óÓÚ8£©£¬¼¸ºõͬʱ·¢±íÁËÁ½Æª¼¸ºõÍêȫһÑùµÄÂÛÎÄ£º ¡¡¡¡1. New Self-Limiting Assembly Model for Si Quantum Rings on Si(100) ¡¡¡¡L.W. Yu, K. J. Chen,* J. Song, J. Xu, W. Li, X. F. Li, J. M. Wang, and X. F. Huang ¡¡¡¡Physical Review Letters 98, 166102 (2007) £¨2006Äê11ÔÂ7ÈÕͶ¸å£¬ 2007Äê4ÔÂ20ÈÕ·¢±í£© ¡¡¡¡£¨ÂÛÎÄÁ´½Ó http://scitation.aip.org/getpdf/ ... iletype=pdf&id= PRLTAO000098000016166102000001&idtype=cvips&prog=normal£© ¡¡¡¡2. Self-Assembled Si Quantum-Ring Structures on a Si Substrate by Plasma-Enhanced Chemical Vapor Deposition Based on a Growth-Etching Competition Mechanism** ¡¡¡¡Lin Wei Yu, Kun Ji Chen,* Jie Song, Jun Xu, Wei Li, Hong Min Li, Mu Wang, Xue Fei Li, and Xin Fan Huang ¡¡¡¡Advanced Materials £¨Communication£©2007, 19, 1577¨C1581 £¨2006Äê 12ÔÂ7ÈÕͶ¸å£¬2007Äê2ÔÂ6ÈÕÐ޸ĸ壬2007Äê5ÔÂ23ÈÕ·¢±í£© ¡¡¡¡£¨ÂÛÎÄÁ´½Ó http://www3.interscience.wiley.c ... /114268326/PDFSTART£© ¡¡¡¡´ÓÏÂÃæµÄ¾ßÌåÊý¾Ý²»ÄÑ¿´³ö£¬ÕâÊÇÒ»ÆðÊ®·ÖµäÐ͵ÄÒ»¸å¶àͶµÄ²»µÀµÂÐÐΪ¡£ ¡¡¡¡1. PRLÂÛÎÄÉϹ²ÓÐ5ÕÅͼ£¬AMÂÛÎÄÉϹ²ÓÐ6ÕÅͼ£¬AMÉϵÄǰ5ÕÅͼÓëPRLµÄ5ÕŠͼ¼¸ºõÍêȫһÑù£¨ÄÜ¿´³öÏ¸Î¢Çø±ðµÄ½ö½öÊÇͼ1ÖеķֱæÂÊÂÔÓв»Í¬£©£¬AMÉÏРÔöµÄµÚ6ÕÅͼ»ù±¾ÉÏÊôÓÚʾÒâͼ¡£ ¡¡¡¡2. PRLÉÏÒ»¹²ÓÐ6¸ö¹«Ê½£¬AMÉÏÒ»¹²ÓÐ7¸ö¹«Ê½£¬Êµ¼ÊÉÏÁ½ÆªÂÛÎĵÄËùÓй«Ê½ ÍêÈ«Ïàͬ£¬×÷Õß½ö½ö°ÑAMÉϵĹ«Ê½£¨5£©ºÍ£¨6£©ºÏ²¢³ÉPRLÉϵĹ«Ê½£¨5£©¡£ ¡¡¡¡3. ÂÛÎĵÄ×÷Õß¼¸ºõÒ»Ñù£¬ ÌØ±ðÊǵÚÒ»×÷ÕßÓëͨѶ×÷ÕßÍêÈ«Ïàͬ¡£ ¡¡¡¡4. Á½ÆªÂÛÎĵÄÖ÷Òª½áÂÛ¼¸ºõÒ»Ö¡£ ¡¡¡¡£¨PRL£©In summary, we propose a new self-limiting assembly growth model for Si quantum ring structures on Si(100). Based on a growth-etching competition mechanism, we obtain perfect Si quantum rings with excellent rotational symmetry, narrow edge width (down to 10 nm), and tunable size and morphology. We suggest that this growth model is not limited to a certain material system, but also represents a general scheme to control and even tailors the evolution of the self-assembly nanostructures into desired size, shape, and complexity, and thus has important theoretical and practical implications. ¡¡¡¡£¨AM£©In summary, we have, for the first time, fabricated self-assembled Si quantum-ring structures on a Si substrate by using a PECVD technique based on a plasma growth/etching competi-tion mechanism.We obtained perfect Si quantum rings with excellent rotational symmetry and a narrow edge width (down to 10 nm). Moreover, the ring size and morphology were tuned by ¡¡¡¡simply adjusting the timing procedure, and the fabrication process was fully compatible with standard microelectronic Si technologies. The as-grown Si ring structures could be electrically well isolated by controlling the ring/substrate junction bias condition, which lays the ground work for further device applications. We also suggest that this growth model, because it is not ¡¡¡¡limited to certain specific material systems, actually represents a general scheme for controlling and tailoring the shapes, sizes, and complexities of self-assembled nanostructures. ¡¡¡¡ÓÐÈË»áÈÏΪÕâÊǹú¼ÊѧÊõ½çÏÈ·¢¶ÌÎÄ£¨Letter£¬Communication£©ÔÙ·¢³¤ÎÄ £¨Regular paper£©µÄÕý³£ÐÐΪ£¬ÉÔ×÷·ÖÎö¾Í»á·¢ÏÖÕâÖÖÀíÓɸù±¾Õ¾²»×¡½Å£º ¡¡¡¡1. PRLºÍAM£¨Communication£©Ëù·¢ÂÛÎĵÄÐÔÖʺÍÒªÇ󼸺õÒ»Ñù£¬Ð¡¢¶Ì¡¢ ¿ìÊÇËüÃǹ²Í¬µÄÌØµã£¬²»´æÔÚһƪ¶ÌµÄºÍһƪ³¤µÄÎÊÌâ¡£ ¡¡¡¡2. Èç¹û½ö½öÊdz¤¶ÌÎĵÄÇø±ð£¬´Ó±íÃ÷ÉÏ¿´£¬³¤ÎÄÓ¦¸ÃÊÇÔÚ¶ÌÎĵĻù´¡ÉÏ, ¶ÔÔÎĽøÐдóÁ¿²¹³ä¡¢ÍØÕ¹, ʹ¶ÌÎÄÖÐδÄܱí´ïÇå³þµÄ˼ÏëºÍÄÚÈݸü¼Ó·á¸»£¬ÒÔ ÀûÓÚ¶ÁÕßµÄÔĶÁ¡£ ´ÓPRL£¨4Ò³£©ºÍAM£¨5Ò³£©µÄÁ½ÆªÂÛÎÄ¿´£¬Î´ÄÜ¿´³öÑо¿ÄÚÈÝ µÄ±¾Öʱ仯£¨½öÓеÄÒ»µã±ä»¯¾ÍÊÇAM±ÈPRL¶àÁËÒ»ÕÅͼ£©¡£ ¡¡¡¡3. ×÷ΪѧÊõ½ç¹ßÀý£¬³¤ÎÄÒ»°ãÔÚ¶ÌÎÄ·¢±íÒÔºó£¨ÖÁÉÙÔÚ½ÓÊÜÒÔºó£©ÔÙͶ¸å ·¢±í£¬¶øPRLºÍAMµÄÁ½ÆªÂÛÎļ¸ºõͬʱͶ¸å¡¢Í¬Ê±·¢±í¡£ ¡¡¡¡4. ÔÙÌáÒ»µãѧÊõÂÛÎĵĻù±¾³£Ê¶£¬ÔÚºó·¢±í³¤ÎĵIJο¼ÎÄÏ×ÖУ¬Ò»¶¨ÒªÒý ÓÃÇ°ÃæÒÑ·¢±í£¨»ò½«Òª·¢±í£©µÄ¶ÌÎÄ£¬ÕâÒ»µãÊÇÅжÏÕâÁ½ÆªÂÛÎÄÊÇ·ñΪ³¤¶ÌÎÄ¹Ø ÏµµÄ¹Ø¼ü¡£Òź¶µÄÊÇÎÒÃÇûÓз¢ÏÖÁ½ÆªÂÛÎÄ»¥ÏàÒýÓᣠ¡¡¡¡Õâ¼þÊ·¢ÉúÔÚÖйú×îºÃµÄ¹ú¼ÒÖØµãʵÑéÊÒÉíÉÏ£¬µÄÈ·Ó¦¸ÃÖµµÃÖйúѧÊõ½ç·´ ˼¡£ ¶øÇÒÁ½ÆªÂÛÎĵÄͨѶ×÷Õß³ÂÀ¤»ù½ÌÊÚ»¹ÊÇÒ»Î»ÖøÃû¿ÆÑ§¼Ò[¼ûÖйú¿ÆÑ§ÔºÑ§ ²¿Ö÷ϯÍŹØÓÚ¹«²¼2007ÄêԺʿÔöÑ¡ÓÐЧºòÑ¡È˵Ĺ«¸æ£¨ÐÅÏ¢¼¼Êõ¿ÆÑ§²¿£¬ÐòºÅ 23£©£¬ ¡¡¡¡http://www.casad.ac.cn/2007-6/2007613102619.htm]£¬Áíһλ×÷ÕßMu Wang£¨ÍõÄÁ£©»¹ÊǹÌÌå΢½á¹¹ÎïÀí¹ú¼ÒÖØµãʵÑéÊÒÖ÷ÈÎ £¨http://vl-ssm.nju.edu.cn/organizationall.asp£©¡£Èç¹ûÃû½ÌÊÚ¡¢Áìµ¼¶¼²» ÄÜÔÚ×Ô¼º×÷ÎªÖØÒª×÷ÕßµÄÎÄÕÂÖÐÆð¼à¶½×÷Óã¬Ë»¹»áÈ¥×ñÊØÑ§ÊõµÄµÀµÂµ×Ïߣ¿Ë ÓÖÓÐ×ʸñºÍÄÜÁ¦È¥¾»»¯ÒÑÔâÑÏÖØÎÛȾµÄÖйúѧÊõ¿ÕÆø£¿ |
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