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纳米线 相关器件研究文章
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纳米线 相关器件研究文章 1、Ultrafast Carrier Dynamics in Semiconductor Nanowires Abstract: Time-resolved measurements of carrier dynamics in Ge and GaN nanowires reveal that carrier relaxation in these systems is governed by surface states and defects. This has significant implications for nanowire-based devices in photonics and thermoelectrics. ©2007 Optical Society of America 2、ZnO Nanowire-Based Schottky-Barrier-Type UV Light-Emitting Diodes Abstract: Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm. ©2006 Optical Society of America |
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