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一片Si表面的综述
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Surface Science Reports Volume 61, Issue 12, 15 December 2006, Pages 465-526 Dissociative adsorption of molecular hydrogen on silicon surfaces M. Dürra, b, and U. Höfera, aDepartment of Physics and Materials Science Centre, Philipps University of Marburg, Renthof 5, D-35032 Marburg, Germany bDepartment of Natural Sciences–Chemical Engineering, University of Applied Sciences, Kanalstr. 33, D-73728 Esslingen, Germany Accepted 11 August 2006. Available online 25 October 2006. Abstract The dissociative adsorption of molecular hydrogen on silicon is considered to be the prototype for an activated chemical reaction at a semiconductor surface. The covalent nature of the silicon–silicon and silicon–hydrogen bonds lead to large lattice distortion in the transition state of the reaction. As a result, the apparently simple reaction exhibits relatively complex pathways and surprisingly rich dynamics. The report reviews, among others, experiments using optical second-harmonic generation, molecular beam techniques and scanning tunnelling microscopy which, in close connection with state-of-the-art density functional theory, have led to a detailed microscopic understanding of H2 adsorption on Si(001) and Si(111) surfaces. On the dimerized Si(001) surface, dissociative adsorption as well as recombinative desorption of H2 is shown to involve the dangling bonds of two neighbouring dimers. Preadsorption of atomic hydrogen or thermal excitation is able to substantially alter the adsorption barrier. As a consequence, the reactivity strongly depends on coverage and surface temperature. In contrast to activated adsorption of hydrogen at metal surfaces, even the most basic description of the dynamics has to include phonon excitation of the silicon substrate. Keywords: Semiconductor surface; Hydrogen; Silicon; Dissociative adsorption; Recombinative desorption; Activated adsorption; Sticking coefficient; Reaction dynamics; Scanning tunnelling microscopy; Second-harmonic generation; Supersonic molecular beam |
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