24小时热门版块排行榜

返回列表

【奖励】本帖被评价143次，作者海天天意增加金币 111.8 个

当前只显示满足指定条件的回帖，点击这里查看本话题的所有回帖

海天天意

铁杆木虫 (正式写手)

应助: 1 (幼儿园)
金币: 8265.5
帖子: 936
在线: 230.2小时
虫号: 1350494

[资源] 最新 2012 science 关于石墨烯的几篇文章

奉上几篇2012 science 上有关graphene的文献，请大家捧场！放心下载，不需金币哈！
下载了，顶一下ok！
1、Electromechanical Properties of Graphene Drumheads ；Science 336, 1557 (2012);
We determined the electromechanical properties of a suspended graphene layer by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements, as well as computational simulations of the graphene-membrane mechanics and morphology. A graphene membrane was continuously deformed by controlling the competing interactions with a STM probe tip and the electric field from a back-gate electrode. The probe tip–induced deformation created a localized strain field in the graphene lattice. STS measurements on the deformed suspended graphene display an electronic spectrum completely different from that of graphene supported by a substrate. The spectrum indicates the formation of a spatially confined quantum dot, in agreement with recent predictions of confinement by strain-induced pseudomagnetic fields.
2、Dislocation-Driven Deformations in Graphene ；Science 337, 209 (2012);
The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materials. Studies of dislocations have focused on three-dimensional materials, and there is little experimental evidence regarding the dynamics of dislocations and their impact at the atomic level on the lattice structure of graphene. We studied the dynamics of dislocation pairs in graphene, recorded with single-atom sensitivity. We examined stepwise dislocation movement along the zig-zag lattice direction mediated either by a single bond rotation or through the loss of two carbon atoms. The strain fields were determined, showing how dislocations deform graphene by elongation and compression of C-C bonds, shear, and lattice rotations.
3、Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures；Science 335, 947 (2012);
An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene terostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical
transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.[ Last edited by 海天天意 on 2012-7-26 at 23:30 ]

回复此楼

» 本帖附件资源列表

欢迎监督和反馈：小木虫仅提供交流平台，不对该内容负责。
本内容由用户自主发布，如果其内容涉及到知识产权问题，其责任在于用户本人，如对版权有异议，请联系邮箱：xiaomuchong@tal.com
附件 1 : ElectromechanicalPropertiesofGrapheneDrumheads.pdf

2012-07-26 14:58:59, 1.05 M