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1、A global heat transfer model, including the melt convection, argon flow, thermal conduction, thermal radiation and fully coupled boundary conditions, was developed to investigate the argon flow effect on the temperature distribution and melt convection in a directional solidification furnace for silicon solar cells. Both the effect of argon flow rate and the effect of furnace pressure were examined. It was found that the heat transfer at themelt free surface due to the gas convection cannot be neglected, though the argon flow contributes little to the global heat transfer at most radiative surfaces. The shear stress caused by the argon flow at the melt free surface becomes larger with the increase in argon flow rate and it further changes the velocity and temperature distributions in the silicon melt. We also found that the effect of argon flow on the melt convection at a low furnace pressure will be enhanced if the argon mass flow rate is kept constant. The solidification process can thus be controlled by modifying the argon flow rate and the furnace pressure. 2、In this study, we performed a numerical simulation of the growth of multicrystalline silicon ingots using the DSS method and compared the results with the experiments. The thermal flow field and the carbon concentration distribution during the growth process were analyzed under the same operating conditions. The carbon concentration distribution in the grown ingots was measured and the results compared with that of the simulation predictions. The simulation results are in good agreement with the experimental ones. The simulation shows that in a directional solidification furnace carbon impurities accumulate easily in the melt near the central region of the melt/crystal interface due to convection. This is the main reason for the non-uniformity of the carbon concentration in ingots grown in the DSS furnace. In order to improve the uniformity of carbon distribution in the melt, a higher convexity of crystalline front interface in the central region needs to be maintained during the growth process to reduce the strength of melt convection around the crystalline front interface. 3、SiC and Si3N4 precipitatesinmulti-crystalline(mc)siliconforphotovoltaicapplicationhavedetrimental effectsonwafersawingprocessandsolarcellperformance.Inthisstudytheinfluenceofthegrowth rate ontheincorporationofcarbonandnitrogenandtheSiC/Si3N4 precipitateformationduring directionalsolidificationofmc-siliconwasinvestigated.Cylindricalsiliconingotswith6cmdiameter and 4–5cmlengthweregrowninalaboratoryscaleverticalgradientfreeze(VGF)furnaceatdifferent growth rates R (R=0.2,1.0and2.2cm/h)andcharacterizedbyinfrared-transmission(IR-TM), FTIR-spectroscopyandlateralphotovoltagescanning(LPS).Theresultsshowthatthegrowthrate R is influencingtheshapeofthephaseboundary,thedistributionofcarbonandnitrogeninthesilicon melt andcrystal,andtheformationofSiCandSi3N4 precipitates.Itwillbeshownthatanimproved crystallizationprocesswithincreasedconvectivetransportinthemeltleadstoprecipitate-freecrystals even athighgrowthrates. |
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至尊木虫 (职业作家)
- 翻译EPI: 110
- 应助: 13 (小学生)
- 贵宾: 0.566
- 金币: 17176.4
- 散金: 1586
- 红花: 30
- 沙发: 3
- 帖子: 3337
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- 虫号: 1238300
- 注册: 2011-03-19
- 性别: GG
- 专业: 金属有机化学
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Mally89: 金币+1, 感谢应助！~欢迎常来！~吼吼！~\(^o^)/~ 2012-04-20 12:52:58
sltmac: 金币+40 2012-05-09 08:58:23
sltmac: 金币+40 2012-05-09 08:58:29
sltmac: 金币+40 2012-05-09 08:58:34
sltmac: 金币+40, 翻译EPI+1 2012-05-09 08:58:40
Mally89: 金币+1, 感谢应助！~欢迎常来！~吼吼！~\(^o^)/~ 2012-04-20 12:52:58
sltmac: 金币+40 2012-05-09 08:58:23
sltmac: 金币+40 2012-05-09 08:58:29
sltmac: 金币+40 2012-05-09 08:58:34
sltmac: 金币+40, 翻译EPI+1 2012-05-09 08:58:40
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在全球传热模型中，主要包括熔体对流、 氩流、 热传导、 辐射热和完全耦合的边界条件，这里我们调查了氩流对温度分布的影响和熔体对流的硅太阳能电池的定向凝固炉。我们对氩流率及炉压力加以研究.我们发现虽然虽然氩流量对全球的传热辐射表面贡献很少，但是仍不能忽视金属自由表面由于气体对流产生的热量。随着氩流率的增加，致熔体自由表面的氩流量的应力变得更大，进一步发生融化。我们还发现，在低炉压力下，熔体对流对氩流量的影响增强，但氩质量流率是否保持不变未知。因此可以通过修改氩流率和炉压来控制凝固过程。 在我们的研究中，多晶硅铸锭用 DSS 方法数值模拟和比较对实验结果进行分析。我们分析了在相同的工作条件下热流场和生长过程中的碳浓度分布。测量锭中的碳浓度分布，比较结果，模拟预测。模拟结果与实验结果一致。模拟显示定向凝固过程中炉碳杂质积累很容易。这是由于生长在 DSS 炉锭中碳浓度的非均匀性产生的。为了改善熔体中碳分布均匀，高凸度的结晶前接口在中部地区可以减少强度的生长，在此过程中要保持熔体结晶前界面对流。 碳化硅和氮化硅等晶硅对光伏应用程序产生不利的影响，特别是晶圆片锯切过程。我们还研究了蓖麻氮的纳入生产影响和氮化硅碳化硅沉淀形成。结果显示硅熔体和水晶的边界，变型蓖麻氮的分布形状影响晶体的生长。 |
2楼2012-04-19 08:05:00