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dazuo523金虫 (小有名气)
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Later the top-gate graphene FET was fabricated and the saturating transistor characteristics were observed. The saturation velocity depends on the charge-carrier concentration which is attributed to scattering by interfacial phonons in the SiO 2 layer which supports the graphene channel. The electrostatic modulation of the channel through an effi ciently coupled top-gate yields the transconductance as high as 150 μ S μ m − 1 . These results demonstrate the feasibility of such graphene devices for analogue and radio-frequency circuit applications where bandgap engineering/opening is unnecessary. |
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